ONSEMI

BFL4026-1E

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道功率 MOSFET，900V，5A，3.6Ω

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-220FP Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 900 RDS(on) Max @ VGS = 10 V (mΩ): 3600 VGS Max (V): 30 Vgs(th) Max (V): - ID Max (A): 3.5 PD Max (W): 2 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 33 更多

Ciss Typ (pF): 650 Qgd Typ @ VGS = 4.5 V (nC): 16.5 Qrr Typ (nC): 4700 Coss Typ (pF): 100 Crss Typ (pF): 35 Package Type: TO-220-3 FullPak MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A

FCA16N60N

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，16 A，199 mΩ，TO-3P

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-3P-3 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 199 VGS Max (V): ±30 Vgs(th) Max (V): 4 ID Max (A): 16 PD Max (W): 134.4 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 40.2 更多

Ciss Typ (pF): 1630 Qgd Typ @ VGS = 4.5 V (nC): 6.7 Qrr Typ (nC): - Coss Typ (pF): 70 Crss Typ (pF): 5 Package Type: TO-3P-3L MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A

FCB36N60NTM

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 功率 MOSFET，N 沟道，SUPREMOS®, FAST，600V，25A，125mΩ，D2PAK

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK-3 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 125 VGS Max (V): ±30 Vgs(th) Max (V): 4 ID Max (A): 36 PD Max (W): 312 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 86 更多

Ciss Typ (pF): 3595 Qgd Typ @ VGS = 4.5 V (nC): 26.4 Qrr Typ (nC): 10000 Coss Typ (pF): 149 Crss Typ (pF): 4 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: No 参考价格: Price N/A

ATP101-TL-H

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

状态: 已停产 Compliance: Pb A H P Channel Polarity: P-Channel Silicon Family: PowerTrench® T1 Package Name: DPAK Type: Low-Medium Voltage Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): -30 RDS(on) Max @ VGS = 10 V (mΩ): 30 Vgs (V): 20 Vgs(th) Max (V): 2.6 ID Max (A): -25 PD Max (W): 30 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 51 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 18.5 更多

Ciss Typ (pF): 875 Qgd Typ @ VGS = 4.5 V (nC): 4 Qrr Typ (nC): - Coss Typ (pF): 220 Crss Typ (pF): 155 Package Type: DPAK (Single Gauge) / ATPAK MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

ATP202-TL-H

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道功率 MOSFET，30V，50A，12mΩ

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: DPAK Type: Low-Medium Voltage Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 30 RDS(on) Max @ VGS = 10 V (mΩ): 12 Vgs (V): 20 Vgs(th) Max (V): 2.6 ID Max (A): 50 PD Max (W): 40 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 20 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 27 更多

Ciss Typ (pF): 1650 Qgd Typ @ VGS = 4.5 V (nC): 4 Qrr Typ (nC): - Coss Typ (pF): 285 Crss Typ (pF): 160 Package Type: DPAK (Single Gauge) / ATPAK MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

ATP208-TL-H

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道，功率 MOSFET，40V，90A，6mΩ

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: DPAK Type: Low-Medium Voltage Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 40 RDS(on) Max @ VGS = 10 V (mΩ): 6 Vgs (V): 20 Vgs(th) Max (V): 2.6 ID Max (A): 90 PD Max (W): 60 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 9.8 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 83 更多

Ciss Typ (pF): 4510 Qgd Typ @ VGS = 4.5 V (nC): 17 Qrr Typ (nC): - Coss Typ (pF): 535 Crss Typ (pF): 385 Package Type: DPAK (Single Gauge) / ATPAK MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

ATP214-TL-H

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道，功率 MOSFET，60V，75A，8.1mΩ，单 ATPAK

状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: DPAK Type: Low-Medium Voltage Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 8.1 Vgs (V): 20 Vgs(th) Max (V): 2.6 ID Max (A): 75 PD Max (W): 60 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 11.5 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 96 更多

Ciss Typ (pF): 4850 Qgd Typ @ VGS = 4.5 V (nC): 18 Qrr Typ (nC): - Coss Typ (pF): 370 Crss Typ (pF): 280 Package Type: DPAK (Single Gauge) / ATPAK MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

FNA21012A

制造商: ONSEMI
分类: 微电路 / 多芯片组件(MCM)
数据:

简介: 智能功率模块，1200 V，10A

状态: 已停产 Compliance: Pb A H P Family: SPM34 Type: 3-Phase Inverter IGBT Substrate: DBC Input Logic: Active High Rated Voltage Min (V): 1200 IO @ 25 °C Min (A): 10 VCE(sat) @ 25 °C Typ (V): 2.2 RDS(on) (Ω): ~NA~ Emitter Configuration: 3 Emitter Pins Shutdown Pin: Yes Mounting Type: DIP Package Type: DIP-034 MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A

AFGHL25T120RLD

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 绝缘栅双极型晶体管
数据:

状态: 已停产 Compliance: Pb A H P Family: - V(BR)CES Typ (V): 1200 IC Max (A): 25 VCE(sat) Typ (V): 1.73 VF Typ (V): 1.43 Eoff Typ (mJ): 0.73 Eon Typ (mJ): 1.94 Trr Typ (ns): 112 Irr Typ (A): ~NA~ Gate Charge Typ (nC): 277 Short Circuit Withstand (µs): 9 EAS Typ (mJ): ~NA~ PD Max (W): 200 Co-Packaged Diode: Yes Package Type: TO-247-3LD MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A

FNA41060B2

制造商: ONSEMI
分类: 微电路 / 多芯片组件(MCM)
数据:

简介: Motion SPM® 45 系列

状态: 已停产 Compliance: Pb A H P Family: SPM45 Type: 3-Phase Inverter IGBT Substrate: Ceramic Input Logic: Active High Rated Voltage Min (V): 600 IO @ 25 °C Min (A): 10 VCE(sat) @ 25 °C Typ (V): 1.7 RDS(on) (Ω): ~NA~ Emitter Configuration: 3 Emitter Pins Shutdown Pin: No Mounting Type: DIP Package Type: CDIP-026 MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A