ANALOG DEVICES INC

Analog Devices, Inc.(NASDAQ: ADI)是全球领先的半导体公司,致力于在现实世界与数字世界之间架起桥梁,以实现智能边缘领域的突破性创新。ADI提供结合模拟、数字和软件技术的解决方案,推动数字化工厂、汽车和数字医疗等领域的持续发展,应对气候变化挑战,并建立人与世界万物的可靠互联。ADI公司2022财年收入超过120亿美元,全球员工约2.5万人。

AD8429BRZ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1 nV/√Hz低噪声仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 50µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 15MHz Ibias (max): 150nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 22V/us 0.1 to 10 Hz VNoise (typ): 100nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.8V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 30nA Ios drift (typ): 15pA/°C 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 31mm² (8-Lead SOIC) (AD8429ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8429ARZ)mm Launch Date: 2011-05-02 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8429ARZ-R7

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1 nV/√Hz低噪声仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 50µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 15MHz Ibias (max): 150nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 22V/us 0.1 to 10 Hz VNoise (typ): 100nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.8V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 30nA Ios drift (typ): 15pA/°C 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 31mm² (8-Lead SOIC) (AD8429ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8429ARZ)mm Launch Date: 2011-05-02 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8429BRZ-R7

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1 nV/√Hz低噪声仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 50µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 15MHz Ibias (max): 150nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 22V/us 0.1 to 10 Hz VNoise (typ): 100nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.8V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 30nA Ios drift (typ): 15pA/°C 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 31mm² (8-Lead SOIC) (AD8429ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8429ARZ)mm Launch Date: 2011-05-02 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8420ARMZ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead MSOP # of Amps: 1 Vos (max): 150µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 55nV/rtHz Iq/Amp (max): 100µA Vs span (min): 2.7V Vs span (max): 36V Slew Rate (typ): 1V/us Short Circuit Current: 10mA 0.1 to 10 Hz VNoise (typ): 1.5µV p-p Ibias TC (typ): 30pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 100dB
Current Noise Density (typ): 80fA/rtHz In V+ Headroom (max): 2.2V In V- Headroom (max): -150mV Out V+ Headroom (max): 200mV Out V- Headroom (max): 130mV Gain TC - Low Gain (max): 10ppm/°C Gain TC - High Gain (max): 10ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.02% Ios (max): 1nA Ios drift (typ): 0.5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16.48mm² (8-Lead MSOP) (AD8420ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8420ARMZ)mm Launch Date: 2011-04-15 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 130MOhms Rcm (typ): 1GOhms Output Type: Single Ended Iq/Amp (typ): 85µA

AD8420ARMZ-R7

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead MSOP # of Amps: 1 Vos (max): 150µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 55nV/rtHz Iq/Amp (max): 100µA Vs span (min): 2.7V Vs span (max): 36V Slew Rate (typ): 1V/us Short Circuit Current: 10mA 0.1 to 10 Hz VNoise (typ): 1.5µV p-p Ibias TC (typ): 30pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 100dB
Current Noise Density (typ): 80fA/rtHz In V+ Headroom (max): 2.2V In V- Headroom (max): -150mV Out V+ Headroom (max): 200mV Out V- Headroom (max): 130mV Gain TC - Low Gain (max): 10ppm/°C Gain TC - High Gain (max): 10ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.02% Ios (max): 1nA Ios drift (typ): 0.5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16.48mm² (8-Lead MSOP) (AD8420ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8420ARMZ)mm Launch Date: 2011-04-15 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 130MOhms Rcm (typ): 1GOhms Output Type: Single Ended Iq/Amp (typ): 85µA

AD8420ARMZ-RL

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead MSOP # of Amps: 1 Vos (max): 150µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 55nV/rtHz Iq/Amp (max): 100µA Vs span (min): 2.7V Vs span (max): 36V Slew Rate (typ): 1V/us Short Circuit Current: 10mA 0.1 to 10 Hz VNoise (typ): 1.5µV p-p Ibias TC (typ): 30pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 100dB
Current Noise Density (typ): 80fA/rtHz In V+ Headroom (max): 2.2V In V- Headroom (max): -150mV Out V+ Headroom (max): 200mV Out V- Headroom (max): 130mV Gain TC - Low Gain (max): 10ppm/°C Gain TC - High Gain (max): 10ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.02% Ios (max): 1nA Ios drift (typ): 0.5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16.48mm² (8-Lead MSOP) (AD8420ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8420ARMZ)mm Launch Date: 2011-04-15 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 130MOhms Rcm (typ): 1GOhms Output Type: Single Ended Iq/Amp (typ): 85µA

AD8229-KGD-CHIPS

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HDZ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HRZ

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HRZ-R7

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
数据:

简介: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA