ANALOG DEVICES INC
Analog Devices, Inc.（NASDAQ: ADI)是全球领先的半导体公司，致力于在现实世界与数字世界之间架起桥梁，以实现智能边缘领域的突破性创新。ADI提供结合模拟、数字和软件技术的解决方案，推动数字化工厂、汽车和数字医疗等领域的持续发展，应对气候变化挑战，并建立人与世界万物的可靠互联。ADI公司2022财年收入超过120亿美元，全球员工约2.5万人。
Product Lifecycle: 量产
Package: Small-Outline IC, Narrow (0.15in)
# of Amps: 1
Vos (max): 450µV
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 10V/V
BW - low gain (typ): 340kHz
Ibias (max): 20nA
Input Voltage Noise (typ): 31nV/rtHz
Iq/Amp (max): 110µA
Vs span (min): 2.7V
Vs span (max): 7.5V
Slew Rate (typ): 60mV/us
CMRR - High Gain (min): 115dB
Current Noise Density (typ): 100fA/rtHz
In V+ Headroom (max): 1.1V
In V- Headroom (max): 200mV
Rail to Rail: Output
Export Classification: EAR99
更多
Automotive: No
Temp Range: -40 to 85°C
Package Area: 31mm² (Small-Outline IC, Narrow (0.15in)) (MAX4196ESA+)mm²
Package Height: 1.75mm (Small-Outline IC, Narrow (0.15in)) (MAX4196ESA+)mm
Launch Date: 1999-04-01
EP: No
Output Type: Single Ended
Iq/Amp (typ): 93µA
Product Lifecycle: 量产
Package: Small-Outline IC, Narrow (0.15in)
# of Amps: 1
Vos (max): 450µV
Gain Set: Fixed Gain
Gain (min): 100V/V
Gain (max): 100V/V
BW - low gain (typ): 3kHz
Ibias (max): 20nA
Input Voltage Noise (typ): 8.7nV/rtHz
Iq/Amp (max): 110µA
Vs span (min): 2.7V
Vs span (max): 7.5V
Slew Rate (typ): 60mV/us
CMRR - High Gain (min): 115dB
Current Noise Density (typ): 100fA/rtHz
In V+ Headroom (max): 1.1V
In V- Headroom (max): 200mV
Rail to Rail: Output
Export Classification: EAR99
更多
Automotive: No
Temp Range: -40 to 85°C
Package Area: 31mm² (Small-Outline IC, Narrow (0.15in)) (MAX4197ESA+)mm²
Package Height: 1.75mm (Small-Outline IC, Narrow (0.15in)) (MAX4197ESA+)mm
Launch Date: 1999-04-01
EP: No
Output Type: Differential
Iq/Amp (typ): 93µA
Product Lifecycle: 量产
Package: Small-Outline IC, Narrow (0.15in)
# of Amps: 1
Vos (max): 450µV
Gain Set: Fixed Gain
Gain (min): 100V/V
Gain (max): 100V/V
BW - low gain (typ): 3kHz
Ibias (max): 20nA
Input Voltage Noise (typ): 8.7nV/rtHz
Iq/Amp (max): 110µA
Vs span (min): 2.7V
Vs span (max): 7.5V
Slew Rate (typ): 60mV/us
CMRR - High Gain (min): 115dB
Current Noise Density (typ): 100fA/rtHz
In V+ Headroom (max): 1.1V
In V- Headroom (max): 200mV
Rail to Rail: Output
Export Classification: EAR99
更多
Automotive: No
Temp Range: -40 to 85°C
Package Area: 31mm² (Small-Outline IC, Narrow (0.15in)) (MAX4197ESA+)mm²
Package Height: 1.75mm (Small-Outline IC, Narrow (0.15in)) (MAX4197ESA+)mm
Launch Date: 1999-04-01
EP: No
Output Type: Differential
Iq/Amp (typ): 93µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA