CSD86330Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.9
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.9
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17505Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.5mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.5
Rds(on) at VGS=4.5 V (max) (mΩ): 4.6
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 10
QGD (typ) (nC): 2.7
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.5
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.6
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 10
QGD (typ) (nC): 2.7
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17507Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、10.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.8
Rds(on) at VGS=4.5 V (max) (mΩ): 16.1
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.7
QGS (typ) (nC): 1.3
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 10.8
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 16.1
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.8
QGD (typ) (nC): 0.7
QGS (typ) (nC): 1.3
ID - silicon limited at TC=25°C (A): 65
ID - package limited (A): 65
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17510Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、5.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.2
Rds(on) at VGS=4.5 V (max) (mΩ): 7.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 6.4
QGD (typ) (nC): 1.9
QGS (typ) (nC): 2.7
ID - silicon limited at TC=25°C (A): 55
ID - package limited (A): 55
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 7.3
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 6.4
QGD (typ) (nC): 1.9
QGS (typ) (nC): 2.7
ID - silicon limited at TC=25°C (A): 55
ID - package limited (A): 55
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17311Q5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.3mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 1.2
QG (typ) (nC): 24
QGD (typ) (nC): 5.2
QGS (typ) (nC): 6.3
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 1.2
更多
QG (typ) (nC): 24
QGD (typ) (nC): 5.2
QGS (typ) (nC): 6.3
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17312Q5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、1.7mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 1.7
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 28
QGD (typ) (nC): 6
QGS (typ) (nC): 8.4
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 1.7
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 28
QGD (typ) (nC): 6
QGS (typ) (nC): 8.4
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD86311W1723
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.7mm x 2.3mm WLP 封装的双通道共源极、42mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 42
VGSTH typ (typ) (V): 1
QG (typ) (nC): 3.1
QGD (typ) (nC): 0.33
QGS (typ) (nC): 0.85
ID - silicon limited at TC=25°C (A): 4.5
ID - package limited (A): 4.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Dual Common Source
Rds(on) at VGS=4.5 V (max) (mΩ): 42
VGSTH typ (typ) (V): 1
更多
QG (typ) (nC): 3.1
QGD (typ) (nC): 0.33
QGS (typ) (nC): 0.85
ID - silicon limited at TC=25°C (A): 4.5
ID - package limited (A): 4.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD86350Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 40A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 40
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17304Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、8.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 8.8
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 5.1
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 8.8
VGSTH typ (typ) (V): 1.3
更多
QG (typ) (nC): 5.1
QGD (typ) (nC): 1.1
QGS (typ) (nC): 1.8
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17309Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、6.3mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.3
VGSTH typ (typ) (V): 1.2
QG (typ) (nC): 7.5
QGD (typ) (nC): 1.7
QGS (typ) (nC): 2.5
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.3
VGSTH typ (typ) (V): 1.2
更多
QG (typ) (nC): 7.5
QGD (typ) (nC): 1.7
QGS (typ) (nC): 2.5
ID - silicon limited at TC=25°C (A): 60
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150