I[Dpuls] max: 400.0A R[th]: 1.0K/W P[tot] max: 125.0W V[DS] max: 80.0V Q[G](typ @10V): 52.0nC Polarity: N C[iss]: 3600.0pF C[oss]: 960.0pF R[DS (on)](@10V) max: 4.7mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 100.0A V[GS(th)]: 2.8V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.84
I[Dpuls] max: 900.0A R[th]: 0.9K/W P[tot] max: 139.0W V[DS] max: 60.0V Q[G](typ @10V): 71.0nC Polarity: N C[iss]: 5200.0pF C[oss]: 1200.0pF R[DS (on)](@10V) max: 1.6mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 225.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.96
I[Dpuls] max: 400.0A R[th]: 1.0K/W P[tot] max: 125.0W V[DS] max: 75.0V Q[G](typ @10V): 52.0nC Polarity: N C[iss]: 3600.0pF C[oss]: 810.0pF R[DS (on)](@10V) max: 4.2mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 100.0A V[GS(th)]: 3.1V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.73
I[Dpuls] max: 200.0A R[th]: 2.5K/W P[tot] max: 50.0W V[DS] max: 60.0V Q[G](typ @4.5V): 15.0nC Polarity: N C[iss]: 2600.0pF C[oss]: 500.0pF Q[G](typ @10V): 34.0nC R[DS (on)](@10V) max: 10.0mΩ R[DS (on)](@4.5V) max: 17.9mΩ R[DS (on)](@4.5V LL) max: 17.9mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 50.0A V[GS(th)]: 1.7V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.26
I[Dpuls] max: 220.0A R[th]: 2.5K/W P[tot] max: 50.0W V[DS] max: 60.0V Q[G](typ @4.5V): 15.0nC Polarity: N C[iss]: 2600.0pF C[oss]: 500.0pF Q[G](typ @10V): 34.0nC R[DS (on)](@10V) max: 10.0mΩ R[DS (on)](@4.5V) max: 17.9mΩ R[DS (on)](@4.5V LL) max: 17.9mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 55.0A V[GS(th)]: 1.7V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.27

IRF7493


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 80V Single N-Channel HEXFET Power MOSFET in a SO-8 Package

Moisture Sensitivity Level: 1 Mounting: SMD Polarity: N P[tot](@ T[A]=25°C) max: 2.5W Q[gd]: 12.0nC R[thJA] max: 50.0K/W V[DS] max: 80.0V V[GS] max: 20.0V Package: SO-8 T[j] max: 150.0°C R[DS (on)](@10V) max: 15.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 35.0nC I[D ](@25°C) max: 9.3A Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.34

ISZ0703NLS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs

I[D ](@25°C) max: 56.0A Package: PQFN 3.3 x 3.3 Fused Lead Polarity: N Q[G](typ @4.5V): 8.7nC Q[G](typ @10V): 17.0nC R[DS (on)](@10V) max: 7.3mΩ R[DS (on)](@4.5V) max: 9.2mΩ V[DS] max: 60.0V V[GS(th)]: 1.7V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.33

ISZ0702NLS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs

I[D ](@25°C) max: 86.0A Package: PQFN 3.3 x 3.3 Fused Lead Polarity: N Q[G](typ @4.5V): 15.0nC Q[G](typ @10V): 29.0nC R[DS (on)](@10V) max: 4.5mΩ R[DS (on)](@4.5V) max: 5.6mΩ V[DS] max: 60.0V V[GS(th)]: 1.6V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.38
I[Dpuls] max: 92.0A R[th]: 3.9K/W P[tot] max: 32.0W V[DS] max: 80.0V Q[G](typ @10V): 6.8nC Polarity: N C[iss]: 564.0pF C[oss]: 156.0pF R[DS (on)](@10V) max: 34.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 23.0A V[GS(th)]: 2.8V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.2
I[Dpuls] max: 960.0A R[th]: 0.8K/W R[thJC] max: 0.8K/W R[thJA] max: 50.0K/W Pin Count: 8.0Pins P[tot] max: 156.0W V[DS] max: 60.0V Q[G](typ @10V): 89.0nC Polarity: N C[iss]: 6500.0pF C[oss]: 1500.0pF R[DS (on)](@10V) max: 1.45mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 240.0A V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Special Features: Fused leads Budgetary Price €/1k: 0.95