V[DS] max: 150.0V I[Dpuls] max: 620.0A Q[G](typ @10V): 69.0nC R[th]: 0.4K/W R[thJC] max: 0.4K/W R[thJA] max: 62.0K/W P[tot] max: 375.0W Polarity: N C[iss]: 5400.0pF C[oss]: 630.0pF R[DS (on)](@10V) max: 5.9mΩ Package: TOLL (HSOF-8) I[D ](@25°C) max: 155.0A V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Budgetary Price €/1k: 2.09
状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel V(BR)DSS Min (V): 52 ID Typ (A): 9 rDS(on) Max (mΩ): 181 PD Max (W): 28.8 Package Type: SOT-223-4 / TO-261-4 MSL Type: 3 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A
状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel V(BR)DSS Min (V): - ID Typ (A): - rDS(on) Max (mΩ): - PD Max (W): - Package Type: Bare Die MSL Type: NA MSL Temp (°C): 0 ON Target: No 参考价格: Price N/A
状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel V(BR)DSS Min (V): 52 ID Typ (A): 9 rDS(on) Max (mΩ): 181 PD Max (W): 28.8 Package Type: SOT-223-4 / TO-261-4 MSL Type: 3 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A
状态: 已停产 Compliance: Pb A H P Channel Polarity: N-Channel V(BR)DSS Min (V): 52 ID Typ (A): 9 rDS(on) Max (mΩ): 1210 PD Max (W): 1.74 Package Type: DPAK-3 MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

FCA20N60

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,20 A,190 mΩ,TO-3P

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-3PN Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 190 VGS Max (V): 5 Vgs(th) Max (V): 5 ID Max (A): 20 PD Max (W): 208 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 75
Ciss Typ (pF): 2370 Qgd Typ @ VGS = 4.5 V (nC): 36 Qrr Typ (nC): - Coss Typ (pF): 1280 Crss Typ (pF): 95 Package Type: TO-3P-3L MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: $3.1955

FCH041N60F

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,600 V,76 A,41 mΩ,TO-247

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 277
Ciss Typ (pF): 10800 Qgd Typ @ VGS = 4.5 V (nC): 116 Qrr Typ (nC): 1790 Coss Typ (pF): 324 Crss Typ (pF): 4.5 Package Type: TO-247-3 MSL Type: NA MSL Temp (°C): 0 ON Target: Yes 参考价格: $5.7034

FCH041N60F-F085

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 600 V、47 A、36 mΩ、TO-247N 沟道 SuperFET™

状态: Lifetime Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): ±20 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 267
Ciss Typ (pF): 10900 Qgd Typ @ VGS = 4.5 V (nC): 106 Qrr Typ (nC): 1900 Coss Typ (pF): 360 Crss Typ (pF): 4.4 Package Type: TO-247-3 MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: $11.5536

FCH041N65EF-F155

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET® II,FRFET®,650 V,76 A,71 mΩ,TO-247

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 650 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 229
Ciss Typ (pF): 9446 Qgd Typ @ VGS = 4.5 V (nC): 90 Qrr Typ (nC): 1500 Coss Typ (pF): 366 Crss Typ (pF): 35 Package Type: TO-247-3 MSL Type: NA MSL Temp (°C): 0 ON Target: Yes 参考价格: $8.4739

FCH041N65EFLN4

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET® II,FRFET®,650 V,76 A,41 mΩ,TO-247 窄体 4L

状态: Obsolete Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247-4 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 650 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 229
Ciss Typ (pF): - Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): - Crss Typ (pF): - Package Type: TO-247 4-LEAD, THIN LEADS MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: Price N/A