Mounting: THT T[j] max: 175.0°C Package: I2PAK (TO-262) Polarity: N P[tot] max: 230.0W R[thJC] max: 0.65K/W V[DS] max: 40.0V Q[gd]: 51.0nC V[GS] max: 20.0V R[DS (on)](@10V) max: 1.8mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 150.0nC I[D ](@25°C) max: 250.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.73

I[Dpuls] max: 452.0A R[thJC] max: 1.8K/W R[th]: 1.8K/W P[tot] max: 69.0W V[DS] max: 30.0V Q[G](typ @4.5V): 27.0nC Polarity: N C[iss]: 4300.0pF C[oss]: 1200.0pF Q[G](typ @10V): 56.0nC R[DS (on)](@10V) max: 3.5mΩ R[DS (on)](@4.5V) max: 4.3mΩ R[DS (on)](@4.5V LL) max: 4.3mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 113.0A V[GS(th)]: 1.48V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.31

I[Dpuls] max: 420.0A R[thJC] max: 1.8K/W R[th]: 1.8K/W P[tot] max: 69.0W V[DS] max: 40.0V Q[G](typ @10V): 48.0nC Polarity: N C[iss]: 3800.0pF C[oss]: 830.0pF Q[G](typ @4.5V): 23.0nC R[DS (on)](@10V) max: 4.0mΩ R[DS (on)](@4.5V) max: 5.6mΩ R[DS (on)](@4.5V LL) max: 5.6mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 105.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.31

I[Dpuls] max: 144.0A R[th]: 5.1K/W P[tot] max: 25.0W V[DS] max: 30.0V Q[G](typ @4.5V): 6.1nC Polarity: N C[iss]: 975.0pF C[oss]: 340.0pF Q[G](typ @10V): 13.0nC R[DS (on)](@10V) max: 12.0mΩ R[DS (on)](@4.5V) max: 15.0mΩ R[DS (on)](@4.5V LL) max: 15.0mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 36.0A V[GS(th)]: 1.67V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.16

I[Dpuls] max: 536.0A Mounting: SMD P[tot] max: 50.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 10.5nC R[th]: 2.5K/W R[thJA] max: 60.0K/W R[thJC] max: 2.5K/W V[DS] max: 25.0V C[iss]: 1500.0pF C[oss]: 750.0pF Q[G](typ @10V): 22.0nC R[DS (on)](@10V) max: 1.7mΩ R[DS (on)](@4.5V) max: 2.3mΩ R[DS (on)](@4.5V LL) max: 2.3mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 134.0A V[GS(th)]: 1.8V 更多

I[Dpuls] max: 160.0A R[thJC] max: 4.1K/W R[th]: 4.1K/W P[tot] max: 30.0W V[DS] max: 30.0V Q[G](typ @4.5V): 8.3nC Polarity: N C[iss]: 1300.0pF C[oss]: 440.0pF Q[G](typ @10V): 17.0nC R[DS (on)](@10V) max: 9.1mΩ R[DS (on)](@4.5V) max: 11.4mΩ R[DS (on)](@4.5V LL) max: 11.4mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 40.0A V[GS(th)]: 1.56V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.18

Moisture Sensitivity Level: 1 Mounting: SMD Package: DPAK (TO-252) P[tot] max: 140.0W R[thJC] max: 1.05K/W T[j] max: 175.0°C V[DS] max: 30.0V V[GS] max: 20.0V Polarity: N Q[gd]: 12.0nC R[DS (on)](@10V) max: 3.3mΩ R[DS (on)](@10V) max: 3.3mΩ R[DS (on)](@4.5V) max: 4.0mΩ R[DS (on)](@4.5V) max: 4.0mΩ V[GS(th)]: 1.85V V[GS(th)]: 1.85V I[D ](@25°C) max: 161.0A I[D ](@25°C) max: 161.0A Q[G](typ @4.5V): 34.0nC Q[G](typ @4.5V): 34.0nC 更多

I[Dpuls] max: 328.0A Mounting: SMD P[tot] max: 36.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 7.1nC R[th]: 3.5K/W R[thJA] max: 60.0K/W R[thJC] max: 3.5K/W V[DS] max: 30.0V C[iss]: 960.0pF C[oss]: 330.0pF Q[G](typ @10V): 15.0nC R[DS (on)](@10V) max: 3.4mΩ R[DS (on)](@4.5V) max: 4.2mΩ R[DS (on)](@4.5V LL) max: 4.2mΩ Special Features: Monolithically Integrated Schottky-like Diode Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 82.0A V[GS(th)]: 1.85V 更多

R[thJC] max: 1.3K/W T[j] max: 150.0°C V[DS] max: 40.0V V[GS] max: 20.0V Moisture Sensitivity Level: 1 Polarity: N Q[gd]: 44.0nC Mounting: SMD P[tot] max: 96.0W R[DS (on)](@10V) max: 1.4mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 141.0nC Micro-stencil: IRF66MX-25 I[D ](@25°C) max: 198.0A Package: DirectFET (M) Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.76

I[Dpuls] max: 188.0A R[thJC] max: 3.6K/W R[th]: 3.6K/W P[tot] max: 35.0W V[DS] max: 40.0V Q[G](typ @4.5V): 8.6nC Polarity: N C[iss]: 1400.0pF C[oss]: 340.0pF Q[G](typ @10V): 18.0nC R[DS (on)](@10V) max: 9.7mΩ R[DS (on)](@4.5V) max: 14.2mΩ R[DS (on)](@4.5V LL) max: 14.2mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 47.0A V[GS(th)]: 1.6V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.22