IRFH7084
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Mounting: SMD
Q[gd]: 41.0nC
R[thJC] max: 0.8K/W
T[j] max: 150.0°C
V[DS] max: 40.0V
Moisture Sensitivity Level: 1
Polarity: N
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.25mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 127.0nC
I[D ](@25°C) max: 265.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.74
I[Dpuls] max: 400.0A
Mounting: SMD
P[tot] max: 43.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 9.0nC
R[th]: 2.9K/W
R[thJA] max: 50.0K/W
R[thJC] max: 2.9K/W
V[DS] max: 30.0V
C[iss]: 1200.0pF
C[oss]: 420.0pF
Q[G](typ @10V): 19.0nC
R[DS (on)](@10V) max: 2.3mΩ
R[DS (on)](@4.5V) max: 2.8mΩ
R[DS (on)](@4.5V LL) max: 2.8mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 1.84V
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Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.34
IRF8734
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 6.9nC
T[j] max: 150.0°C
V[DS] max: 30.0V
Package: SO-8
R[thJA] max: 50.0K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 3.5mΩ
R[DS (on)](@4.5V) max: 5.1mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 21.0A
Q[G](typ @4.5V): 20.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31
I[Dpuls] max: 140.0A
R[thJC] max: 5.0K/W
R[th]: 5.0K/W
P[tot] max: 25.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 5.0nC
Polarity: N
C[iss]: 730.0pF
C[oss]: 340.0pF
Q[G](typ @10V): 9.5nC
R[DS (on)](@10V) max: 13.0mΩ
R[DS (on)](@4.5V) max: 17.0mΩ
R[DS (on)](@4.5V LL) max: 17.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 35.0A
V[GS(th)]: 1.75V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.18
Mounting: SMD
R[thJA] max: 50.0K/W
V[DS] max: 40.0V
Moisture Sensitivity Level: 1
Package: SO-8
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 5.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 17.0mΩ
R[DS (on)](@4.5V) max: 21.0mΩ
V[GS(th)]: 2.0V
I[D ](@25°C) max: 9.0A
Q[G](typ @4.5V): 15.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.25
I[Dpuls] max: 228.0A
R[th]: 4.5K/W
P[tot] max: 28.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 5.9nC
Polarity: N
C[iss]: 770.0pF
C[oss]: 300.0pF
Q[G](typ @10V): 12.0nC
R[DS (on)](@10V) max: 5.2mΩ
R[DS (on)](@4.5V) max: 7.2mΩ
R[DS (on)](@4.5V LL) max: 7.2mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 57.0A
V[GS(th)]: 1.61V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
I[Dpuls] max: 816.0A
R[thJC] max: 1.0K/W
R[th]: 1.0K/W
P[tot] max: 125.0W
V[DS] max: 40.0V
Q[G](typ @10V): 81.0nC
Polarity: N
C[iss]: 6600.0pF
C[oss]: 1800.0pF
R[DS (on)](@10V) max: 1.9mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 204.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.47
ISC019N03L5S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio
I[D ](@25°C) max: 100.0A
I[Dpuls] max: 400.0A
Mounting: SMT
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 22.0nC
Q[G](typ @10V): 44.0nC
R[DS (on)](@10V) max: 1.9mΩ
R[DS (on)](@4.5V) max: 2.4mΩ
V[DS] max: 30.0V
V[GS(th)] max: 2.0V
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.26
IRFH5300
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel Power MOSFET in a PQFN 5x6 package
Mounting: SMD
P[tot](@ T[A]=25°C) max: 3.6W
R[thJC] max: 0.5K/W
T[j] max: 150.0°C
V[DS] max: 30.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 16.0nC
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.4mΩ
R[DS (on)](@4.5V) max: 2.1mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 100.0A
Q[G](typ @4.5V): 50.0nC
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.55
I[Dpuls] max: 372.0A
R[th]: 2.2K/W
P[tot] max: 57.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 15.0nC
Polarity: N
C[iss]: 2600.0pF
C[oss]: 930.0pF
Q[G](typ @10V): 31.0nC
R[DS (on)](@10V) max: 4.2mΩ
R[DS (on)](@4.5V) max: 6.5mΩ
R[DS (on)](@4.5V LL) max: 6.5mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 93.0A
V[GS(th)]: 1.68V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.3