BSC061N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 328.0A
Mounting: SMD
P[tot] max: 74.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 27.0nC
R[th]: 1.7K/W
R[thJA] max: 50.0K/W
R[thJC] max: 1.7K/W
V[DS] max: 80.0V
C[iss]: 1900.0pF
C[oss]: 310.0pF
R[DS (on)](@10V) max: 6.1mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 82.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.52
BSC012N06NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ power MOSFETs in SuperSO8 package
I[D ](@25°C) max: 306.0A
I[Dpuls] max: 1224.0A
Mounting: SMT
P[tot] max: 214.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 115.0nC
R[DS (on)](@10V) max: 1.2mΩ
V[DS] max: 60.0V
I[D ](@ T[C]=25°C) max: 306.0A
Package: SuperSO8 5x6
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Special Features: Fused leads
Budgetary Price €/1k: 1.21
BSC026N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 400.0A
Mounting: SMD
P[tot] max: 156.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 74.0nC
R[th]: 0.8K/W
R[thJA] max: 50.0K/W
V[DS] max: 80.0V
C[iss]: 5200.0pF
C[oss]: 840.0pF
R[DS (on)](@10V) max: 2.6mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.98
IQE050N08NM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance
I[D ](@25°C) max: 101.0A
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @10V): 34.6nC
R[DS (on)](@10V) max: 5.0mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Special Features: Center-Gate
Budgetary Price €/1k: 0.94
IQE046N08LM5CG
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package
I[D ](@25°C) max: 99.0A
I[Dpuls] max: 396.0A
Operating Temperature max: 175.0°C
P[tot] max: 100.0W
Package: PQFN 3.3x3.3 Source-Down
Polarity: N
Q[G](typ @4.5V): 19.0nC
Q[G](typ @10V): 38.0nC
R[DS (on)](@10V) max: 4.6mΩ
R[DS (on)](@4.5V) max: 5.9mΩ
V[DS] max: 80.0V
V[GS(th)]: 1.7V
Special Features: Center-Gate
Budgetary Price €/1k: 1.09
BSC065N06LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
I[Dpuls] max: 256.0A
Mounting: SMD
P[tot] max: 46.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 10.0nC
Q[gd]: 3.3nC
R[th]: 2.7K/W
R[thJC] max: 2.7K/W
R[thJA] max: 50.0K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 6.5mΩ
R[DS (on)](@4.5V) max: 9.2mΩ
R[DS (on)](@4.5V LL) max: 9.2mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 64.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.36
ISC011N06LM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Optimos™ 5 logic level power MOSFET 60V in small package
I[D ](@25°C) max: 295.0A
Package: SuperSO8 5x6
Polarity: N
Q[G](typ @4.5V): 63.0nC
Q[G](typ @10V): 127.0nC
R[DS (on)](@10V) max: 1.15mΩ
R[DS (on)](@4.5V) max: 1.45mΩ
V[DS] max: 60.0V
V[GS(th)] max: 2.3V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 1.42
I[Dpuls] max: 484.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @10V): 27.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 490.0pF
R[DS (on)](@10V) max: 3.9mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 121.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.49
BSC117N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 196.0A
Mounting: SMD
P[tot] max: 50.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @10V): 15.0nC
R[th]: 2.5K/W
R[thJA] max: 50.0K/W
R[thJC] max: 2.5K/W
V[DS] max: 80.0V
C[iss]: 1000.0pF
C[oss]: 180.0pF
R[DS (on)](@10V) max: 11.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 49.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37
I[Dpuls] max: 528.0A
R[th]: 1.5K/W
P[tot] max: 83.0W
V[DS] max: 60.0V
Q[G](typ @10V): 37.0nC
Polarity: N
C[iss]: 2700.0pF
C[oss]: 660.0pF
R[DS (on)](@10V) max: 2.8mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 132.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.84