BSC040N10NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 140.0A I[Dpuls] max: 560.0A Mounting: SMT P[tot] max: 167.0W Polarity: N Q[G](typ @10V): 58.0nC R[DS (on)](@10V) max: 4.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Package: SuperSO8 5x6 DSC Operating Temperature max: 175.0°C Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.34
I[Dpuls] max: 224.0A Mounting: SMD P[tot] max: 96.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 19.0nC Q[gd]: 4.0nC R[th]: 1.3K/W R[thJA] max: 50.0K/W R[thJC] max: 1.3K/W V[DS] max: 150.0V C[iss]: 1370.0pF C[oss]: 341.0pF R[DS (on)](@10V) max: 16.0mΩ Package: SuperSO8 5x6 I[D ](@25°C) max: 56.0A V[GS(th)]: 3.8V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.9

BSC160N15NS5SC


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

I[D ](@25°C) max: 56.0A I[Dpuls] max: 224.0A Operating Temperature max: 175.0°C P[tot] max: 115.0W Package: SuperSO8 5x6 DSC Polarity: N Q[G](typ @10V): 19.0nC R[DS (on)](@10V) max: 16.0mΩ V[DS] max: 150.0V V[GS(th)]: 3.8V Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.14

ISC151N20NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package

I[D ](@25°C) max: 74.0A Operating Temperature max: 175.0°C Package: SuperSO8 5x6 FL Polarity: N Q[G](typ @10V): 31.0nC R[DS (on)](@10V) max: 15.1mΩ V[DS] max: 200.0V V[GS(th)]: 3.7V Special Features: Fused leads Budgetary Price €/1k: 2.07

ISC037N12NM6


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package

I[D ](@25°C) max: 163.0A I[Dpuls] max: 652.0A Operating Temperature max: 175.0°C P[tot] max: 214.0W Package: SuperSO8 5x6 FL Polarity: N Q[G](typ @10V): 46.0nC R[DS (on)](@10V) max: 3.7mΩ V[DS] max: 120.0V V[GS(th)]: 3.1V Battery voltage: 48-72 V Special Features: Fused leads Budgetary Price €/1k: 1.35

ISC035N10NM5LF2


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package

I[D ](@25°C) max: 164.0A Operating Temperature max: 175.0°C Package: SuperSO8 5x6 FL Polarity: N Q[G](typ @10V): 70.0nC R[DS (on)](@10V) max: 3.5mΩ V[DS] max: 100.0V V[GS(th)]: 3.1V Special Features: Wide SOA Special Features: Fused leads Budgetary Price €/1k: 1.66

IPP050N10NF2S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package

I[D ](@25°C) max: 110.0A I[Dpuls] max: 440.0A Mounting: THT P[tot] max: 150.0W Package: TO-220 Pin Count: 3.0Pins Polarity: N Q[G](typ @10V): 51.0nC R[DS (on)](@10V) max: 5.0mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Battery voltage: 48-72 V Budgetary Price €/1k: 0.88

IPP129N10NF2S


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package

I[D ](@25°C) max: 52.0A I[Dpuls] max: 208.0A Mounting: THT P[tot] max: 71.0W Package: TO-220 Pin Count: 3.0Pins Polarity: N Q[G](typ @10V): 19.0nC R[DS (on)](@10V) max: 12.9mΩ V[DS] max: 100.0V V[GS(th)]: 3.0V Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.47

IRFB4229


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 250V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

Mounting: THT Package: TO-220 P[tot] max: 330.0W R[thJC] max: 0.45K/W V[DS] max: 250.0V V[GS] max: 30.0V Polarity: N Q[gd]: 26.0nC T[j] max: 175.0°C R[DS (on)](@10V) max: 46.0mΩ V[GS(th)]: 4.0V Q[G](typ @10V): 72.0nC I[D ](@25°C) max: 46.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 1.04

IRFB4410Z


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

Package: TO-220 Polarity: N P[tot] max: 230.0W Q[gd]: 27.0nC R[thJC] max: 0.65K/W T[j] max: 175.0°C V[DS] max: 100.0V V[GS] max: 20.0V Mounting: THT R[DS (on)](@10V) max: 9.0mΩ V[GS(th)]: 3.0V Q[G](typ @10V): 83.0nC I[D ](@25°C) max: 97.0A Operating Temperature max: 175.0°C Budgetary Price €/1k: 0.54