I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 60.0V
Q[G](typ @10V): 56.0nC
Package: I2PAK (TO-262)
Polarity: N
C[iss]: 4100.0pF
C[oss]: 980.0pF
R[DS (on)](@10V) max: 2.9mΩ
I[D ](@25°C) max: 136.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.69
IPB031N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package
I[Dpuls] max: 480.0A
Mounting: SMD
P[tot] max: 167.0W
Package: D2PAK (TO-263)
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 69.0nC
R[th]: 0.9K/W
R[thJA] max: 62.0K/W
V[DS] max: 80.0V
C[iss]: 4800.0pF
C[oss]: 790.0pF
R[DS (on)](@10V) max: 3.1mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.0
IRL80HS120
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: New logic level MOSFETs for low VGS
I[D ](@25°C) max: 12.5A
I[Dpuls] max: 41.0A
Mounting: SMD
P[tot] max: 11.5W
Polarity: N
Q[gd]: 1.8nC
R[th]: 13.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 13.0K/W
V[DS] max: 80.0V
R[DS (on)](@10V) max: 32.0mΩ
R[DS (on)](@4.5V) max: 42.0mΩ
R[DS (on)](@4.5V LL) max: 42.0mΩ
Q[G](typ @4.5V): 4.7nC
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.25
BSZ110N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
R[th]: 2.5K/W
V[DS] max: 80.0V
P[tot] max: 50.0W
I[Dpuls] max: 160.0A
Q[G](typ @10V): 15.0nC
R[thJC] max: 2.5K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1000.0pF
C[oss]: 180.0pF
R[DS (on)](@10V) max: 11.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.29
IRL60HS118
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: New logic level MOSFETs for low VGS
I[D ](@25°C) max: 18.5A
I[Dpuls] max: 56.0A
Mounting: SMD
P[tot] max: 11.5W
Polarity: N
Q[gd]: 2.1nC
R[th]: 13.0K/W
R[thJA] max: 60.0K/W
R[thJC] max: 13.0K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 17.0mΩ
R[DS (on)](@4.5V) max: 23.5mΩ
R[DS (on)](@4.5V LL) max: 23.5mΩ
Q[G](typ @4.5V): 5.3nC
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Package: PQFN 2 x 2 (DFN2020)
Budgetary Price €/1k: 0.3
BSZ070N08LS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
I[Dpuls] max: 160.0A
Mounting: SMD
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 14.1nC
Q[gd]: 5.0nC
R[th] max: 1.8K/W
R[thJA] max: 62.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 80.0V
C[iss]: 1800.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 7.0mΩ
R[DS (on)](@4.5V) max: 9.4mΩ
R[DS (on)](@4.5V LL) max: 9.4mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.43
IPB029N06NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
I[D ](@25°C) max: 120.0A
I[D ] max: 120.0A
I[Dpuls] max: 480.0A
Mounting: SMD
Operating Temperature max: 175.0°C
P[tot] max: 150.0W
Package: D2PAK (TO-263)
Polarity: N
Q[G](typ @10V): 68.0nC
Q[G]: 68.0nC
R[DS (on)](@10V) max: 2.9mΩ
V[DS] max: 60.0V
V[GS(th)]: 2.8V
Battery voltage: 24-66 V
Budgetary Price €/1k: 0.75
V[DS] max: 60.0V
P[tot] max: 36.0W
I[Dpuls] max: 160.0A
Q[G](typ @10V): 12.0nC
R[th]: 3.5K/W
R[thJC] max: 3.5K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 860.0pF
C[oss]: 210.0pF
R[DS (on)](@10V) max: 10.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 40.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.22
BSZ075N08NS5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package
R[th]: 1.8K/W
V[DS] max: 80.0V
P[tot] max: 69.0W
I[Dpuls] max: 292.0A
Q[G](typ @10V): 24.0nC
R[thJC] max: 1.8K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1600.0pF
C[oss]: 280.0pF
R[DS (on)](@10V) max: 7.5mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 73.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.38
I[Dpuls] max: 392.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @10V): 27.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 490.0pF
R[DS (on)](@10V) max: 4.2mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 98.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.5