Configuration: Discrete I[D ](@100°C) max: 8.0A I[D ](@25°C) max: 12.0A Package: TO-254AA Polarity: N Qualification: QPL V[BRDSS] min: 500.0V QPL Part Number: 2N7228 R[DS (on)](@25°C) max: 415.0mΩ
Configuration: Discrete I[D ](@100°C) max: 40.0A I[D ](@25°C) max: 55.0A Package: SMD-1 Polarity: N V[BRDSS] min: 60.0V R[DS (on)](@25°C) max: 20.0mΩ
Configuration: Discrete I[D ](@100°C) max: -7.0A I[D ](@25°C) max: -11.0A Package: SMD-1 Polarity: P Qualification: QPL V[BRDSS] min: -200.0V QPL Part Number: 2N7237U R[DS (on)](@25°C) max: 510.0mΩ
Configuration: Discrete I[D ](@100°C) max: 2.25A I[D ](@25°C) max: 3.5A Package: TO-205AF Polarity: N Qualification: QPL V[BRDSS] min: 200.0V QPL Part Number: 2N6790 R[DS (on)](@25°C) max: 800.0mΩ
Configuration: Discrete I[D ](@100°C) max: 16.0A I[D ](@25°C) max: 22.0A Package: SMD-0.5 Polarity: N V[BRDSS] min: 100.0V R[DS (on)](@25°C) max: 52.0mΩ Language: SPICE Voltage Class: 100.0V Product Category: High Reliability MOSFETs
Configuration: Discrete I[D ](@100°C) max: -10.0A I[D ](@25°C) max: -15.8A Package: TO-257AA Polarity: P V[BRDSS] min: -100.0V R[DS (on)](@25°C) max: 200.0mΩ
Configuration: Discrete I[D ](@100°C) max: 20.0A I[D ](@25°C) max: 28.0A Package: TO-254AA Polarity: N Qualification: QPL V[BRDSS] min: 100.0V QPL Part Number: 2N7218 R[DS (on)](@25°C) max: 77.0mΩ Language: SPICE Voltage Class: 100.0V Product Category: High Reliability MOSFETs
Configuration: Discrete I[D ](@100°C) max: 22.0A I[D ](@25°C) max: 22.0A Package: SMD-0.5 Polarity: N V[BRDSS] min: 30.0V R[DS (on)](@25°C) max: 14.0mΩ Voltage Class: 100.0V Language: SPICE Product Category: High Reliability MOSFETs
Configuration: Discrete I[D ](@100°C) max: 2.25A I[D ](@25°C) max: 3.5A Package: TO-205AF Polarity: N Qualification: DLA V[BRDSS] min: 100.0V QPL Part Number: 2N6782 R[DS (on)](@25°C) max: 600.0mΩ Language: SPICE Voltage Class: 100.0V Product Category: High Reliability MOSFETs
Configuration: Discrete I[D ](@100°C) max: -10.0A I[D ](@25°C) max: -15.8A Package: TO-257AA Polarity: P V[BRDSS] min: -100.0V R[DS (on)](@25°C) max: 200.0mΩ