CSD18511Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 63
QGD (typ) (nC): 11.2
QGS (typ) (nC): 13.2
ID - silicon limited at TC=25°C (A): 159
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.5
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 63
QGD (typ) (nC): 11.2
QGS (typ) (nC): 13.2
ID - silicon limited at TC=25°C (A): 159
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18513Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.4mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 45
QGD (typ) (nC): 8.8
QGS (typ) (nC): 9.1
ID - silicon limited at TC=25°C (A): 124
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 45
QGD (typ) (nC): 8.8
QGS (typ) (nC): 9.1
ID - silicon limited at TC=25°C (A): 124
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18514Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、4.9mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.9
Rds(on) at VGS=4.5 V (max) (mΩ): 7.9
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 29
QGD (typ) (nC): 5
QGS (typ) (nC): 6
ID - silicon limited at TC=25°C (A): 89
ID - package limited (A): 50
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.9
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 7.9
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 29
QGD (typ) (nC): 5
QGS (typ) (nC): 6
ID - silicon limited at TC=25°C (A): 89
ID - package limited (A): 50
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13380F3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 0.91
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.19
ID - silicon limited at TC=25°C (A): 3.6
ID - package limited (A): 3.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
VGSTH typ (typ) (V): 0.85
更多
QG (typ) (nC): 0.91
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.19
ID - silicon limited at TC=25°C (A): 3.6
ID - package limited (A): 3.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD13385F5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、19mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 19
VGSTH typ (typ) (V): 0.8
QG (typ) (nC): 3.9
QGD (typ) (nC): 0.39
QGS (typ) (nC): 0.74
ID - silicon limited at TC=25°C (A): 7.1
ID - package limited (A): 7.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 12
VGS (V): 8
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 19
VGSTH typ (typ) (V): 0.8
更多
QG (typ) (nC): 3.9
QGD (typ) (nC): 0.39
QGS (typ) (nC): 0.74
ID - silicon limited at TC=25°C (A): 7.1
ID - package limited (A): 7.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17585F5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、33mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 27
Rds(on) at VGS=4.5 V (max) (mΩ): 33
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 1.9
QGD (typ) (nC): 0.39
QGS (typ) (nC): 0.53
ID - silicon limited at TC=25°C (A): 5.9
ID - package limited (A): 5.9
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 27
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 33
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 1.9
QGD (typ) (nC): 0.39
QGS (typ) (nC): 0.53
ID - silicon limited at TC=25°C (A): 5.9
ID - package limited (A): 5.9
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17581Q3A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、4.7mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.8
Rds(on) at VGS=4.5 V (max) (mΩ): 4.7
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 20
QGD (typ) (nC): 4
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 101
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.8
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.7
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 20
QGD (typ) (nC): 4
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 101
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17581Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、4.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 20
QGD (typ) (nC): 4
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 123
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 20
QGD (typ) (nC): 4
QGS (typ) (nC): 6.9
ID - silicon limited at TC=25°C (A): 123
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD23285F5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、35mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -12
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 35
Rds(on) at VGS=2.5 V (max) (mΩ): 47
VGSTH typ (typ) (V): -0.65
QG (typ) (nC): 3.2
QGD (typ) (nC): 0.48
QGS (typ) (nC): 0.66
ID - silicon limited at TC=25°C (A): 3.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -12
VGS (V): -6
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 35
Rds(on) at VGS=2.5 V (max) (mΩ): 47
更多
VGSTH typ (typ) (V): -0.65
QG (typ) (nC): 3.2
QGD (typ) (nC): 0.48
QGS (typ) (nC): 0.66
ID - silicon limited at TC=25°C (A): 3.3
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD25485F5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、42mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 42
Rds(on) at VGS=2.5 V (max) (mΩ): 70
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 2.7
QGD (typ) (nC): 0.56
QGS (typ) (nC): 0.67
ID - silicon limited at TC=25°C (A): 3.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 42
Rds(on) at VGS=2.5 V (max) (mΩ): 70
更多
VGSTH typ (typ) (V): -0.95
QG (typ) (nC): 2.7
QGD (typ) (nC): 0.56
QGS (typ) (nC): 0.67
ID - silicon limited at TC=25°C (A): 3.2
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150