CSD87355Q5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 45A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 45
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 45
Power loss (W): 2.8
Ploss current (A): 25
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19505KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、3.1mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 212
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.1
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 76
QGD (typ) (nC): 11
QGS (typ) (nC): 25
ID - silicon limited at TC=25°C (A): 212
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD19506KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、2.3mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 2.5
QG (typ) (nC): 120
QGD (typ) (nC): 20
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 291
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
VGSTH typ (typ) (V): 2.5
更多
QG (typ) (nC): 120
QGD (typ) (nC): 20
QGS (typ) (nC): 37
ID - silicon limited at TC=25°C (A): 291
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD87335Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 25A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 1.5
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 1.5
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87502Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、42mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 32.4
Rds(on) at VGS=4.5 V (max) (mΩ): 42
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.2
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1
ID - silicon limited at TC=25°C (A): 5
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 32.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 42
VGSTH typ (typ) (V): 1.6
QG (typ) (nC): 2.2
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1
ID - silicon limited at TC=25°C (A): 5
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD85302L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 24
VGSTH typ (typ) (V): 0.9
QG (typ) (nC): 6
QGD (typ) (nC): 1.4
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7
ID - package limited (A): 7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 20
VGS (V): 10
Type: N-channel
Configuration: Dual Common Drain
Rds(on) at VGS=4.5 V (max) (mΩ): 24
VGSTH typ (typ) (V): 0.9
更多
QG (typ) (nC): 6
QGD (typ) (nC): 1.4
QGS (typ) (nC): 1.2
ID - silicon limited at TC=25°C (A): 7
ID - package limited (A): 7
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19532KTT
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 D2PAK 封装的单路、5.6mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.6
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 44
QGD (typ) (nC): 5.6
QGS (typ) (nC): 17
ID - silicon limited at TC=25°C (A): 136
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 5.6
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 44
QGD (typ) (nC): 5.6
QGS (typ) (nC): 17
ID - silicon limited at TC=25°C (A): 136
ID - package limited (A): 200
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD25404Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、6.5mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.5
Rds(on) at VGS=2.5 V (max) (mΩ): 12.1
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 10.8
QGD (typ) (nC): 2.2
QGS (typ) (nC): 2.8
ID - silicon limited at TC=25°C (A): -104
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -12
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 6.5
Rds(on) at VGS=2.5 V (max) (mΩ): 12.1
更多
VGSTH typ (typ) (V): -0.9
QG (typ) (nC): 10.8
QGD (typ) (nC): 2.2
QGS (typ) (nC): 2.8
ID - silicon limited at TC=25°C (A): -104
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19537Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、14.5mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14.5
VGSTH typ (typ) (V): 3
QG (typ) (nC): 16
QGD (typ) (nC): 2.9
QGS (typ) (nC): 5.5
ID - silicon limited at TC=25°C (A): 53
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 14.5
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 16
QGD (typ) (nC): 2.9
QGS (typ) (nC): 5.5
ID - silicon limited at TC=25°C (A): 53
ID - package limited (A): 50
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87334Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 20A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.6
Ploss current (A): 12
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 20
Power loss (W): 1.6
Ploss current (A): 12
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150