CSD17576Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 25
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.9
ID - silicon limited at TC=25°C (A): 184
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 2.9
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 25
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.9
ID - silicon limited at TC=25°C (A): 184
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17575Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、3.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.2
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 23
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.5
ID - silicon limited at TC=25°C (A): 182
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.2
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 23
QGD (typ) (nC): 5.4
QGS (typ) (nC): 8.5
ID - silicon limited at TC=25°C (A): 182
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD23382F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 0.6mm x 1mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
Rds(on) at VGS=2.5 V (max) (mΩ): 105
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.5
ID - silicon limited at TC=25°C (A): 3.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -12
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 76
Rds(on) at VGS=2.5 V (max) (mΩ): 105
更多
VGSTH typ (typ) (V): -0.8
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.15
QGS (typ) (nC): 0.5
ID - silicon limited at TC=25°C (A): 3.5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19534Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、15.1mΩ、100V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 15.1
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 17
QGD (typ) (nC): 3.2
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 44
ID - package limited (A): 40
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 100
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 15.1
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 17
QGD (typ) (nC): 3.2
QGS (typ) (nC): 5.1
ID - silicon limited at TC=25°C (A): 44
ID - package limited (A): 40
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87333Q3D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的 15A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.5
Ploss current (A): 8
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1.5
Ploss current (A): 8
Features: Motor control, Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17570Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、0.92mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.69
Rds(on) at VGS=4.5 V (max) (mΩ): 0.92
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 93
QGD (typ) (nC): 34
QGS (typ) (nC): 27
ID - silicon limited at TC=25°C (A): 407
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 0.69
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 0.92
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 93
QGD (typ) (nC): 34
QGS (typ) (nC): 27
ID - silicon limited at TC=25°C (A): 407
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD88537ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 SO-8 封装的双路、15mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 15
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 16
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 15
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 16
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD88539ND
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 SO-8 封装的双路、28mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 28
VGSTH typ (typ) (V): 3
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 11.7
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Dual
Rds(on) at VGS=10 V (max) (mΩ): 28
VGSTH typ (typ) (V): 3
更多
QG (typ) (nC): 14
QGD (typ) (nC): 2.3
QGS (typ) (nC): 4.6
ID - silicon limited at TC=25°C (A): 11.7
ID - package limited (A): 15
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD19501KCS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 TO-220 封装的单路、6.6mΩ、80V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
VGSTH typ (typ) (V): 2.6
QG (typ) (nC): 38
QGD (typ) (nC): 5.8
QGS (typ) (nC): 12.4
ID - silicon limited at TC=25°C (A): 129
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
VDS (V): 80
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.6
VGSTH typ (typ) (V): 2.6
更多
QG (typ) (nC): 38
QGD (typ) (nC): 5.8
QGS (typ) (nC): 12.4
ID - silicon limited at TC=25°C (A): 129
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 175
CSD25310Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、23.9mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 23.9
Rds(on) at VGS=2.5 V (max) (mΩ): 32.5
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 3.6
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 9.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): -20
VGS (V): -8
Type: P-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 23.9
Rds(on) at VGS=2.5 V (max) (mΩ): 32.5
更多
VGSTH typ (typ) (V): -0.85
QG (typ) (nC): 3.6
QGD (typ) (nC): 0.5
QGS (typ) (nC): 1.1
ID - silicon limited at TC=25°C (A): 9.6
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150