CSD18532NQ5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、3.4mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.8
QG (typ) (nC): 49
QGD (typ) (nC): 7.9
QGS (typ) (nC): 16
ID - silicon limited at TC=25°C (A): 163
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.4
VGSTH typ (typ) (V): 2.8
更多
QG (typ) (nC): 49
QGD (typ) (nC): 7.9
QGS (typ) (nC): 16
ID - silicon limited at TC=25°C (A): 163
ID - package limited (A): 100
Logic level: No
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87381P
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 2.5mm LGA 封装的 15A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1
Ploss current (A): 8
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 15
Power loss (W): 1
Ploss current (A): 8
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17381F4
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单通道、117mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 109
Rds(on) at VGS=4.5 V (max) (mΩ): 117
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.133
QGS (typ) (nC): 0.226
ID - silicon limited at TC=25°C (A): 3.1
ID - package limited (A): 3.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 12
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 109
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 117
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 1.04
QGD (typ) (nC): 0.133
QGS (typ) (nC): 0.226
ID - silicon limited at TC=25°C (A): 3.1
ID - package limited (A): 3.1
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87588N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 2.5mm LGA 封装的 25A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 2.1
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 25
Power loss (W): 2.1
Ploss current (A): 15
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17556Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、1.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.4
Rds(on) at VGS=4.5 V (max) (mΩ): 1.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 28.5
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10.7
ID - silicon limited at TC=25°C (A): 215
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.4
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.8
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 28.5
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10.7
ID - silicon limited at TC=25°C (A): 215
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD87351ZQ5D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的 32A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 32
Power loss (W): 2.5
Ploss current (A): 20
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: Power block
Configuration: PowerBlock
ID - continuous drain current at TA=25°C (A): 32
Power loss (W): 2.5
Ploss current (A): 20
Features: Power supply
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16556Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、1.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.07
Rds(on) at VGS=4.5 V (max) (mΩ): 1.5
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 37
QGD (typ) (nC): 13
QGS (typ) (nC): 12
ID - silicon limited at TC=25°C (A): 263
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 1.07
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 1.5
VGSTH typ (typ) (V): 1.4
QG (typ) (nC): 37
QGD (typ) (nC): 13
QGS (typ) (nC): 12
ID - silicon limited at TC=25°C (A): 263
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18502Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、2.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 52
QGD (typ) (nC): 8.4
QGS (typ) (nC): 10.3
ID - silicon limited at TC=25°C (A): 204
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 40
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 2.3
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 3.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 52
QGD (typ) (nC): 8.4
QGS (typ) (nC): 10.3
ID - silicon limited at TC=25°C (A): 204
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD18532Q5B
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.2
Rds(on) at VGS=4.5 V (max) (mΩ): 4.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10
ID - silicon limited at TC=25°C (A): 172
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 60
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 3.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 4.3
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 44
QGD (typ) (nC): 6.9
QGS (typ) (nC): 10
ID - silicon limited at TC=25°C (A): 172
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17552Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、6.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.2
Rds(on) at VGS=4.5 V (max) (mΩ): 7.5
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 9
QGD (typ) (nC): 2
QGS (typ) (nC): 3.6
ID - silicon limited at TC=25°C (A): 88
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 20
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 6.2
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 7.5
VGSTH typ (typ) (V): 1.5
QG (typ) (nC): 9
QGD (typ) (nC): 2
QGS (typ) (nC): 3.6
ID - silicon limited at TC=25°C (A): 88
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150