CSD17305Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3.6mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 3.6
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 14.1
QGD (typ) (nC): 3
QGS (typ) (nC): 4.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 3.6
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 14.1
QGD (typ) (nC): 3
QGS (typ) (nC): 4.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17306Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、4.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 11.8
QGD (typ) (nC): 2.4
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 11.8
QGD (typ) (nC): 2.4
QGS (typ) (nC): 3.5
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17307Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、12.1mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.1
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 4
QGD (typ) (nC): 1
QGS (typ) (nC): 1.3
ID - silicon limited at TC=25°C (A): 73
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 12.1
VGSTH typ (typ) (V): 1.3
更多
QG (typ) (nC): 4
QGD (typ) (nC): 1
QGS (typ) (nC): 1.3
ID - silicon limited at TC=25°C (A): 73
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17310Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、5.9mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.9
VGSTH typ (typ) (V): 1.3
QG (typ) (nC): 8.9
QGD (typ) (nC): 2.1
QGS (typ) (nC): 2.7
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.9
VGSTH typ (typ) (V): 1.3
更多
QG (typ) (nC): 8.9
QGD (typ) (nC): 2.1
QGS (typ) (nC): 2.7
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD17301Q5A
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单路、3mΩ、30V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 3
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 19
QGD (typ) (nC): 4.3
QGS (typ) (nC): 5.7
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 30
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 3
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 19
QGD (typ) (nC): 4.3
QGS (typ) (nC): 5.7
ID - silicon limited at TC=25°C (A): 100
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16340Q3
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 3mm x 3mm SON 封装的单路、5.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 6.5
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 21
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.5
VGSTH typ (typ) (V): 0.85
更多
QG (typ) (nC): 6.5
QGD (typ) (nC): 1.2
QGS (typ) (nC): 2.1
ID - silicon limited at TC=25°C (A): 21
ID - package limited (A): 60
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16408Q5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、6.8mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 16
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.5
Rds(on) at VGS=4.5 V (max) (mΩ): 6.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 6.7
QGD (typ) (nC): 1.9
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 113
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 16
Type: N-channel
Configuration: Single
Rds(on) at VGS=10 V (max) (mΩ): 4.5
更多
Rds(on) at VGS=4.5 V (max) (mΩ): 6.8
VGSTH typ (typ) (V): 1.8
QG (typ) (nC): 6.7
QGD (typ) (nC): 1.9
QGS (typ) (nC): 3.1
ID - silicon limited at TC=25°C (A): 113
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16301Q2
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 2mm x 2mm SON 封装的单通道、29mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 2
QGD (typ) (nC): 0.4
QGS (typ) (nC): 0.6
ID - silicon limited at TC=25°C (A): 20
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 29
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 2
QGD (typ) (nC): 0.4
QGS (typ) (nC): 0.6
ID - silicon limited at TC=25°C (A): 20
ID - package limited (A): 5
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16322Q5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、5.8mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 6.8
QGD (typ) (nC): 1.3
QGS (typ) (nC): 2.4
ID - silicon limited at TC=25°C (A): 97
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 6.8
QGD (typ) (nC): 1.3
QGS (typ) (nC): 2.4
ID - silicon limited at TC=25°C (A): 97
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
CSD16325Q5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 采用 5mm x 6mm SON 封装的单通道、2.2mΩ、25V、N 沟道 NexFET™ 功率 MOSFET
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 18
QGD (typ) (nC): 3.5
QGS (typ) (nC): 6.6
ID - silicon limited at TC=25°C (A): 33
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150
VDS (V): 25
VGS (V): 10
Type: N-channel
Configuration: Single
Rds(on) at VGS=4.5 V (max) (mΩ): 2.2
VGSTH typ (typ) (V): 1.1
更多
QG (typ) (nC): 18
QGD (typ) (nC): 3.5
QGS (typ) (nC): 6.6
ID - silicon limited at TC=25°C (A): 33
ID - package limited (A): 100
Logic level: Yes
Rating: Catalog
Operating temperature range (°C): -55 to 150