IRL7486M
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel Logic Level StrongIRFET™ Power MOSFET in a DirectFET™ ME package
Mounting: SMD
P[tot] max: 104.0W
R[thJC] max: 1.2K/W
V[DS] max: 40.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 33.0nC
T[j] max: 150.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.25mΩ
R[DS (on)](@4.5V) max: 2.0mΩ
V[GS(th)]: 1.8V
Micro-stencil: IRF66ME-25
I[D ](@25°C) max: 209.0A
Q[G](typ @4.5V): 76.0nC
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.72
ISC036N04NM5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package
I[D ](@25°C) max: 98.0A
I[Dpuls] max: 392.0A
P[tot] max: 63.0W
Polarity: N
Q[G](typ @10V): 21.0nC
R[DS (on)](@10V) max: 3.6mΩ
V[DS] max: 40.0V
V[GS(th)] max: 3.4V
Package: SuperSO8 5x6
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.28
I[Dpuls] max: 196.0A
R[thJC] max: 3.6K/W
R[th]: 3.6K/W
P[tot] max: 35.0W
V[DS] max: 40.0V
Q[G](typ @10V): 18.0nC
Polarity: N
C[iss]: 1400.0pF
C[oss]: 340.0pF
Q[G](typ @4.5V): 8.6nC
R[DS (on)](@10V) max: 9.3mΩ
R[DS (on)](@4.5V) max: 13.7mΩ
R[DS (on)](@4.5V LL) max: 13.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 49.0A
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.19
I[Dpuls] max: 176.0A
R[th]: 4.6K/W
P[tot] max: 27.0W
V[DS] max: 30.0V
Q[G](typ @4.5V): 7.2nC
Polarity: N
C[iss]: 1100.0pF
C[oss]: 390.0pF
Q[G](typ @10V): 15.0nC
R[DS (on)](@10V) max: 9.2mΩ
R[DS (on)](@4.5V) max: 11.8mΩ
R[DS (on)](@4.5V LL) max: 11.8mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 44.0A
V[GS(th)]: 1.57V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.16
I[Dpuls] max: 320.0A
R[thJC] max: 2.5K/W
R[th]: 2.5K/W
P[tot] max: 48.0W
V[DS] max: 30.0V
Q[G](typ @10V): 34.0nC
Polarity: N
C[iss]: 2700.0pF
C[oss]: 800.0pF
Q[G](typ @4.5V): 17.0nC
R[DS (on)](@10V) max: 4.5mΩ
R[DS (on)](@4.5V) max: 5.7mΩ
R[DS (on)](@4.5V LL) max: 5.7mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 80.0A
V[GS(th)]: 1.52V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.2
I[Dpuls] max: 744.0A
Mounting: SMD
P[tot] max: 69.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 18.0nC
R[th]: 1.8K/W
R[thJA] max: 50.0K/W
R[thJC] max: 1.8K/W
V[DS] max: 30.0V
C[iss]: 2500.0pF
C[oss]: 850.0pF
Q[G](typ @10V): 39.0nC
R[DS (on)](@10V) max: 1.3mΩ
R[DS (on)](@4.5V) max: 1.7mΩ
R[DS (on)](@4.5V LL) max: 1.7mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 186.0A
V[GS(th)]: 1.78V
更多
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.51
I[Dpuls] max: 1020.0A
R[th]: 1.3K/W
P[tot] max: 96.0W
V[DS] max: 25.0V
Q[G](typ @4.5V): 72.0nC
Polarity: N
C[iss]: 5800.0pF
C[oss]: 1900.0pF
Q[G](typ @10V): 126.0nC
R[DS (on)](@10V) max: 0.9mΩ
R[DS (on)](@4.5V) max: 1.2mΩ
R[DS (on)](@4.5V LL) max: 1.2mΩ
Special Features: Wide SOA
Package: SuperSO8 5x6
I[D ](@25°C) max: 255.0A
V[GS(th)]: 1.5V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.56
IRFH7084
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 40V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
Mounting: SMD
Q[gd]: 41.0nC
R[thJC] max: 0.8K/W
T[j] max: 150.0°C
V[DS] max: 40.0V
Moisture Sensitivity Level: 1
Polarity: N
V[GS] max: 20.0V
R[DS (on)](@10V) max: 1.25mΩ
V[GS(th)]: 3.05V
Q[G](typ @10V): 127.0nC
I[D ](@25°C) max: 265.0A
Package: SuperSO8 5x6
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.74
I[Dpuls] max: 400.0A
Mounting: SMD
P[tot] max: 43.0W
Pin Count: 8.0Pins
Polarity: N
Q[G](typ @4.5V): 9.0nC
R[th]: 2.9K/W
R[thJA] max: 50.0K/W
R[thJC] max: 2.9K/W
V[DS] max: 30.0V
C[iss]: 1200.0pF
C[oss]: 420.0pF
Q[G](typ @10V): 19.0nC
R[DS (on)](@10V) max: 2.3mΩ
R[DS (on)](@4.5V) max: 2.8mΩ
R[DS (on)](@4.5V LL) max: 2.8mΩ
Special Features: Monolithically Integrated Schottky-like Diode
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 1.84V
更多
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.34
IRF8734
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 6.9nC
T[j] max: 150.0°C
V[DS] max: 30.0V
Package: SO-8
R[thJA] max: 50.0K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 3.5mΩ
R[DS (on)](@4.5V) max: 5.1mΩ
V[GS(th)]: 1.8V
I[D ](@25°C) max: 21.0A
Q[G](typ @4.5V): 20.0nC
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.31