I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 114.0W
V[DS] max: 80.0V
Q[G](typ @10V): 42.0nC
Polarity: N
C[iss]: 2900.0pF
C[oss]: 780.0pF
R[DS (on)](@10V) max: 5.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.55
IRFB3206
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel IR MOSFET™ in a TO-220AB package
Package: TO-220
Polarity: N
Q[gd]: 35.0nC
R[thJC] max: 0.5K/W
V[DS] max: 60.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 300.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 3.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 120.0nC
I[D ](@25°C) max: 210.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.78
IRFZ24N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Package: TO-220
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
Polarity: N
Qgd: 5.1nC
Tj: None°C
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 13.3nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.21
IPP027N08N5
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 5 power MOSFET 80V for telecom applications
I[Dpuls] max: 480.0A
Mounting: THT
P[tot] max: 214.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 99.0nC
R[th]: 0.7K/W
R[thJA] max: 62.0K/W
V[DS] max: 80.0V
C[iss]: 6900.0pF
C[oss]: 1100.0pF
R[DS (on)](@10V) max: 2.7mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.38
IRFB3307
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Mounting: THT
Package: TO-220
P[tot] max: 250.0W
R[thJC] max: 0.61K/W
V[DS] max: 75.0V
V[GS] max: 20.0V
Polarity: N
Q[gd]: 46.0nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 6.3mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 120.0nC
I[D ](@25°C) max: 120.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.84
IRLZ44N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Mounting: THT
Polarity: N
P[tot] max: 83.0W
Q[gd]: 16.7nC
T[j] max: 175.0°C
V[GS] max: 16.0V
Package: TO-220
R[thJC] max: 1.8K/W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 22.0mΩ
R[DS (on)](@4.5V) max: 35.0mΩ
V[GS(th)]: 1.5V
I[D ](@25°C) max: 47.0A
Q[G](typ @4.5V): 32.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.34
I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 75.0V
Q[G](typ @10V): 155.0nC
Package: TO-220
Polarity: N
C[iss]: 10800.0pF
C[oss]: 2420.0pF
R[DS (on)](@10V) max: 2.3mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.1V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.43
IRFB7537
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Mounting: THT
P[tot] max: 230.0W
V[GS] max: 20.0V
Package: TO-220
Polarity: N
Q[gd]: 43.0nC
R[thJC] max: 0.65K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 3.3mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 142.0nC
I[D ](@25°C) max: 173.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.66
IRL3705N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 130.0W
Q[gd]: 32.7nC
R[thJC] max: 1.2K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
V[GS] max: 16.0V
Mounting: THT
R[DS (on)](@10V) max: 10.0mΩ
V[GS(th)]: 1.5V
I[D ](@25°C) max: 89.0A
Q[G](typ @4.5V): 65.3nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.6
I[Dpuls] max: 200.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 23.0nC
Polarity: N
C[iss]: 3800.0pF
C[oss]: 710.0pF
Q[G](typ @10V): 51.0nC
R[DS (on)](@10V) max: 6.7mΩ
R[DS (on)](@4.5V) max: 12.1mΩ
R[DS (on)](@4.5V LL) max: 12.1mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 50.0A
V[GS(th)]: 1.7V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.37