I[Dpuls] max: 100.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 250.0V
Q[G](typ @10V): 22.0nC
Package: TO-220
Polarity: N
C[iss]: 1770.0pF
C[oss]: 112.0pF
R[DS (on)](@10V) max: 60.0mΩ
I[D ](@25°C) max: 25.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.09
IRLB4030
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 370.0W
Q[gd]: 45.0nC
T[j] max: 175.0°C
V[DS] max: 100.0V
Mounting: THT
R[thJC] max: 0.4K/W
V[GS] max: 16.0V
R[DS (on)](@10V) max: 4.3mΩ
R[DS (on)](@4.5V) max: 4.5mΩ
V[GS(th)]: 1.75V
I[D ](@25°C) max: 180.0A
Q[G](typ @4.5V): 87.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 1.21
I[Dpuls] max: 400.0A
Mounting: THT
P[tot] max: 188.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 76.0nC
Q[gd]: 15.0nC
R[th]: 0.5K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.8K/W
V[DS] max: 100.0V
R[DS (on)](@10V) max: 3.9mΩ
I[D ](@25°C) max: 100.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 48-72 V
Budgetary Price €/1k: 1.37
IPP069N20NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package
I[D ](@25°C) max: 136.0A
Operating Temperature max: 175.0°C
Package: TO-220
Polarity: N
Q[G](typ @10V): 73.0nC
R[DS (on)](@10V) max: 6.9mΩ
V[DS] max: 200.0V
V[GS(th)]: 3.7V
Budgetary Price €/1k: 3.11
IRFB4115
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
Q[gd]: 26.0nC
R[thJC] max: 0.4K/W
T[j] max: 175.0°C
V[DS] max: 150.0V
Mounting: THT
P[tot] max: 380.0W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 11.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 77.0nC
I[D ](@25°C) max: 104.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.93
IRFB5620
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel Digital Audio Power MOSFET in a TO-220 package
Package: TO-220
Polarity: N
P[tot] max: 144.0W
Q[gd]: 7.9nC
R[thJC] max: 1.04K/W
T[j] max: 175.0°C
V[DS] max: 200.0V
V[GS] max: 20.0V
Mounting: THT
R[DS (on)](@10V) max: 72.5mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 25.0nC
I[D ](@25°C) max: 25.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.72
I[Dpuls] max: 480.0A
Mounting: THT
P[tot] max: 300.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 80.0nC
Q[gd]: 16.0nC
R[th]: 0.5K/W
R[thJA] max: 62.0K/W
R[thJC] max: 0.5K/W
V[DS] max: 150.0V
C[iss]: 6000.0pF
C[oss]: 1500.0pF
R[DS (on)](@10V) max: 5.1mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.03
IPP026N10NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 100 V in TO-220 package
I[D ](@25°C) max: 184.0A
I[Dpuls] max: 736.0A
Mounting: THT
P[tot] max: 250.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 103.0nC
R[DS (on)](@10V) max: 2.6mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 48-72 V
Budgetary Price €/1k: 1.54
IPP073N13NM6
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ 6 power MOSFET 135 V Normal Level in TO-220
I[D ](@25°C) max: 98.0A
Operating Temperature max: 175.0°C
Package: TO-220
Polarity: N
Q[G](typ @10V): 43.0nC
R[DS (on)](@10V) max: 7.3mΩ
V[DS] max: 135.0V
V[GS(th)]: 3.0V
Budgetary Price €/1k: 1.09
IPA082N10NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single n-channel power MOSFET 100V in TO-220 FullPAK package
I[D ](@25°C) max: 46.0A
Polarity: N
Q[G](typ @10V): 28.0nC
R[DS (on)](@10V) max: 8.2mΩ
V[DS] max: 100.0V
V[GS(th)]: 3.0V
Package: TO-220 FullPAK
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.57