IRFR3411
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a D-Pak package
Package: DPAK (TO-252)
T[j] max: 175.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 130.0W
Q[gd]: 14.0nC
R[thJC] max: 1.2K/W
V[DS] max: 100.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 44.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 48.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 32.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.32
IRFR120N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel IR MOSFET in a D-Pak package
Mounting: SMD
P[tot] max: 39.0W
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 7.3nC
R[thJC] max: 3.2K/W
T[j] max: 175.0°C
V[DS] max: 100.0V
R[DS (on)](@10V) max: 210.0mΩ
R[DS (on)](@10V) max: 210.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 16.7nC
Q[G](typ @10V): 16.7nC
I[D ](@25°C) max: 9.4A
I[D ](@25°C) max: 9.4A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.18
IRLR120N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel IR MOSFET in a D-Pak package
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 39.0W
R[thJC] max: 3.2K/W
V[DS] max: 100.0V
V[GS] max: 16.0V
Moisture Sensitivity Level: 1
Polarity: N
Q[gd]: 6.7nC
T[j] max: 175.0°C
R[DS (on)](@10V) max: 185.0mΩ
R[DS (on)](@10V) max: 185.0mΩ
R[DS (on)](@4.5V) max: 265.0mΩ
R[DS (on)](@4.5V) max: 265.0mΩ
V[GS(th)]: 1.5V
V[GS(th)]: 1.5V
I[D ](@25°C) max: 10.0A
I[D ](@25°C) max: 10.0A
Q[G](typ @4.5V): 13.3nC
Q[G](typ @4.5V): 13.3nC
更多
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.21
IRFR15N20D
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel IR MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 140.0W
Q[gd]: 14.0nC
R[thJC] max: 1.04K/W
T[j] max: 175.0°C
V[DS] max: 200.0V
V[GS] max: 30.0V
Package: DPAK (TO-252)
R[DS (on)](@10V) max: 165.0mΩ
V[GS(th)]: 4.25V
Q[G](typ @10V): 27.0nC
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.47
IRLR3410
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 100V Single N-Channel Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 52.0W
R[thJC] max: 2.4K/W
T[j] max: 175.0°C
V[DS] max: 100.0V
Package: DPAK (TO-252)
Q[gd]: 13.3nC
V[GS] max: 16.0V
R[DS (on)](@10V) max: 105.0mΩ
R[DS (on)](@10V) max: 105.0mΩ
R[DS (on)](@4.5V) max: 155.0mΩ
R[DS (on)](@4.5V) max: 155.0mΩ
V[GS(th)]: 1.5V
V[GS(th)]: 1.5V
Special Features: Wide SOA
I[D ](@25°C) max: 17.0A
I[D ](@25°C) max: 17.0A
Q[G](typ @4.5V): 22.7nC
更多
Q[G](typ @4.5V): 22.7nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.23
Budgetary Price €/1k: 0.27
I[Dpuls] max: 172.0A
R[th]: 2.1K/W
P[tot] max: 71.0W
V[DS] max: 100.0V
Q[G](typ @10V): 19.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 1350.0pF
C[oss]: 237.0pF
R[DS (on)](@10V) max: 18.0mΩ
I[D ](@25°C) max: 43.0A
V[GS(th)]: 2.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.39
IRF6785
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package
T[j] max: 150.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
P[tot] max: 57.0W
Q[gd]: 6.9nC
Mounting: SMD
P[tot](@ T[A]=25°C) max: 2.8W
R[thJC] max: 1.4K/W
V[DS] max: 200.0V
R[DS (on)](@10V) max: 100.0mΩ
V[GS(th)]: 4.0V
Q[G](typ @10V): 26.0nC
Micro-stencil: IRF66MZ-25
I[D ](@25°C) max: 19.0A
Package: DirectFET (M)
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.96
I[Dpuls] max: 300.0A
R[th]: 1.1K/W
P[tot] max: 136.0W
V[DS] max: 120.0V
Q[G](typ @10V): 49.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 3240.0pF
C[oss]: 408.0pF
R[DS (on)](@10V) max: 11.0mΩ
I[D ](@25°C) max: 75.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.73
I[Dpuls] max: 320.0A
R[th]: 1.2K/W
P[tot] max: 125.0W
V[DS] max: 100.0V
Q[G](typ @10V): 42.0nC
Package: I2PAK (TO-262)
Polarity: N
C[iss]: 2990.0pF
C[oss]: 523.0pF
R[DS (on)](@10V) max: 8.6mΩ
I[D ](@25°C) max: 82.0A
V[GS(th)]: 4.5V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.59
I[Dpuls] max: 400.0A
R[th]: 0.5K/W
P[tot] max: 300.0W
V[DS] max: 150.0V
Q[G](typ @10V): 70.0nC
Package: I2PAK (TO-262)
Polarity: N
C[iss]: 5470.0pF
C[oss]: 638.0pF
R[DS (on)](@10V) max: 7.5mΩ
I[D ](@25°C) max: 120.0A
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 2.33