Mounting: SMT
VDS: NoneV
RDS (on): NonemΩ
RDS (on)(typ): 110.0mΩ
Generation: G5
GS-065-011-6-LR-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 2.2nC
RDS (on): NonemΩ
RDS (on)(typ): 125.0mΩ
VDS: NoneV
Generation: G4
GS66502B-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 3.3nC
RDS (on)(typ): 100.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
IGLR60R340D1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 1.2nC
VDS: NoneV
RDS (on)(typ): 270.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 140.0mΩ
Generation: G5
RDS (on): NonemΩ
IGI60F1414A1L
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600V CoolGaN™ Integrated Power Stage (IPS) to deliver high density, high efficiency solution
Mounting: SMT
QG: 2.2nC
VDS: NoneV
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 140.0mΩ
Generation: G5
RDS (on): NonemΩ
IGT60R190D1
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: 600 V CoolGaN™ 600 V e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 3.2nC
VDS: NoneV
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
GS-065-011-1-L-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 2.2nC
RDS (on)(typ): 150.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3
GS-065-011-2-L-TR
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管
描述: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 2.2nC
RDS (on)(typ): 150.0mΩ
RDS (on): NonemΩ
VDS: NoneV
Generation: ≤ G3