IRFS3806
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Mounting: SMD
P[tot] max: 71.0W
R[thJC] max: 2.12K/W
V[DS] max: 60.0V
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 6.3nC
T[j] max: 175.0°C
V[GS] max: 20.0V
R[DS (on)](@10V) max: 15.8mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 22.0nC
I[D ](@25°C) max: 43.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.38
IRFS7534
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Mounting: SMD
P[tot] max: 294.0W
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 56.0nC
R[thJC] max: 0.51K/W
T[j] max: 175.0°C
V[DS] max: 60.0V
R[DS (on)](@10V) max: 2.4mΩ
V[GS(th)]: 2.9V
Q[G](typ @10V): 186.0nC
I[D ](@25°C) max: 195.0A
Operating Temperature max: 175.0°C
Battery voltage: 24-36 V
Budgetary Price €/1k: 0.93
I[Dpuls] max: 180.0A
R[th]: 1.8K/W
P[tot] max: 83.0W
V[DS] max: 60.0V
Q[G](typ @10V): 27.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 2000.0pF
C[oss]: 490.0pF
R[DS (on)](@10V) max: 5.7mΩ
I[D ](@25°C) max: 45.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.45
IRF3007S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 30.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Mounting: SMD
P[tot] max: 120.0W
R[thJC] max: 1.25K/W
V[DS] max: 75.0V
R[DS (on)](@10V) max: 12.6mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 89.0nC
I[D ](@25°C) max: 62.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.73
IRFS3207
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel Power MOSFET in a D2-Pak package
Moisture Sensitivity Level: 1
Ptot: NoneW
RthJC: NoneK/W
VGS: NoneV
Mounting: SMD
Package: D2PAK (TO-263)
Polarity: N
Qgd: 68.0nC
Tj: None°C
VDS: NoneV
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 180.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 1.13
IDpuls: NoneA
Rth: 0.5K/W
Ptot: NoneW
VDS: NoneV
QG(typ @10V): 155.0nC
Package: D2PAK (TO-263)
Polarity: N
Ciss: 10800.0pF
Coss: 2420.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 3.1V
Operating Temperature: None°C
Budgetary Price €/1k: 1.97
IRFZ48NS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: IR MOSFET 55 V in a D²PAK package
Moisture Sensitivity Level: 1
Package: D2PAK (TO-263)
Polarity: N
Q[gd]: 20.0nC
T[j] max: 175.0°C
V[DS] max: 55.0V
Mounting: SMD
P[tot] max: 140.0W
R[thJC] max: 1.1K/W
V[GS] max: 20.0V
R[DS (on)](@10V) max: 14.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 54.0nC
I[D ](@25°C) max: 64.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.35
I[Dpuls] max: 200.0A
R[th]: 1.9K/W
P[tot] max: 79.0W
V[DS] max: 60.0V
Q[G](typ @4.5V): 22.0nC
Package: D2PAK (TO-263)
Polarity: N
C[iss]: 3700.0pF
C[oss]: 690.0pF
R[DS (on)](@10V) max: 8.1mΩ
R[DS (on)](@4.5V) max: 14.3mΩ
R[DS (on)](@4.5V LL) max: 14.3mΩ
I[D ](@25°C) max: 50.0A
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.41
IDpuls: NoneA
Rth: 0.8K/W
Ptot: NoneW
VDS: NoneV
QG(typ @10V): 124.0nC
Package: D2PAK (TO-263)
Polarity: N
Ciss: 10000.0pF
Coss: 2200.0pF
RDS (on)(@10V): NonemΩ
ID (@25°C): NoneA
VGS(th): 3.0V
Operating Temperature: None°C
Budgetary Price €/1k: 0.62
IRF3808S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Mounting: SMD
Package: D2PAK (TO-263)
Q[gd]: 50.0nC
V[DS] max: 75.0V
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
T[j] max: 175.0°C
P[tot] max: 200.0W
R[thJC] max: 0.75K/W
R[DS (on)](@10V) max: 7.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 150.0nC
Special Features: Wide SOA
I[D ](@25°C) max: 106.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.96