IRLR3915
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
I[D ](@25°C) max: 61.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.38
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 17.0nC
T[j] max: 175.0°C
V[GS] max: 16.0V
Mounting: SMD
P[tot] max: 120.0W
R[thJC] max: 1.3K/W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 14.0mΩ
R[DS (on)](@4.5V) max: 17.0mΩ
V[GS(th)]: 2.0V
Q[G](typ @10V): 61.0nC
IRLR2705
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 9.3nC
R[thJC] max: 2.7K/W
T[j] max: 175.0°C
V[GS] max: 16.0V
Mounting: SMD
P[tot] max: 46.0W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 40.0mΩ
R[DS (on)](@10V) max: 40.0mΩ
R[DS (on)](@4.5V) max: 65.0mΩ
R[DS (on)](@4.5V) max: 65.0mΩ
V[GS(th)]: 1.5V
V[GS(th)]: 1.5V
I[D ](@25°C) max: 28.0A
I[D ](@25°C) max: 28.0A
Q[G](typ @4.5V): 16.7nC
Q[G](typ @4.5V): 16.7nC
更多
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.17
IRLR2905
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 16.7nC
T[j] max: 175.0°C
V[GS] max: 16.0V
Mounting: SMD
P[tot] max: 69.0W
R[thJC] max: 1.8K/W
V[DS] max: 55.0V
R[DS (on)](@10V) max: 27.0mΩ
R[DS (on)](@10V) max: 27.0mΩ
R[DS (on)](@4.5V) max: 40.0mΩ
R[DS (on)](@4.5V) max: 40.0mΩ
V[GS(th)]: 1.5V
V[GS(th)]: 1.5V
I[D ](@25°C) max: 42.0A
I[D ](@25°C) max: 42.0A
Q[G](typ @4.5V): 23.0nC
Q[G](typ @4.5V): 23.0nC
更多
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.28
IRFR024N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
Mounting: SMD
P[tot] max: 38.0W
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Package: DPAK (TO-252)
Polarity: N
Q[gd]: 5.1nC
R[thJC] max: 3.3K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
R[DS (on)](@10V) max: 75.0mΩ
R[DS (on)](@10V) max: 75.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 13.3nC
Q[G](typ @10V): 13.3nC
I[D ](@25°C) max: 17.0A
I[D ](@25°C) max: 17.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.18
IRFR1205
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 69.0W
Q[gd]: 18.0nC
R[thJC] max: 1.8K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
Package: DPAK (TO-252)
T[j] max: 175.0°C
R[DS (on)](@10V) max: 27.0mΩ
R[DS (on)](@10V) max: 27.0mΩ
V[GS(th)]: 3.0V
V[GS(th)]: 3.0V
Q[G](typ @10V): 43.3nC
Q[G](typ @10V): 43.3nC
I[D ](@25°C) max: 44.0A
I[D ](@25°C) max: 44.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.24
R[th]: 1.0K/W
I[Dpuls] max: 90.0A
R[thJC] max: 1.0K/W
P[tot] max: 150.0W
V[DS] max: 80.0V
Q[G](typ @10V): 52.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 3570.0pF
C[oss]: 963.0pF
R[DS (on)](@10V) max: 5.3mΩ
I[D ](@25°C) max: 90.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.64
I[Dpuls] max: 180.0A
R[th]: 1.9K/W
P[tot] max: 79.0W
V[DS] max: 80.0V
Q[G](typ @10V): 19.0nC
Package: DPAK (TO-252)
Polarity: N
C[iss]: 1300.0pF
C[oss]: 353.0pF
R[DS (on)](@10V) max: 13.5mΩ
I[D ](@25°C) max: 45.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.31
IRFR3607
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Mounting: SMD
Package: DPAK (TO-252)
P[tot] max: 140.0W
Q[gd]: 16.0nC
T[j] max: 175.0°C
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Polarity: N
R[thJC] max: 1.05K/W
V[DS] max: 75.0V
R[DS (on)](@10V) max: 9.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 56.0nC
I[D ](@25°C) max: 80.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.45
IRLR2908
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 120.0W
Q[gd]: 11.0nC
R[thJC] max: 1.3K/W
T[j] max: 175.0°C
V[DS] max: 80.0V
Package: DPAK (TO-252)
V[GS] max: 16.0V
R[DS (on)](@10V) max: 28.0mΩ
R[DS (on)](@10V) max: 28.0mΩ
R[DS (on)](@4.5V) max: 30.0mΩ
R[DS (on)](@4.5V) max: 30.0mΩ
V[GS(th)]: 1.75V
V[GS(th)]: 1.75V
I[D ](@25°C) max: 39.0A
I[D ](@25°C) max: 39.0A
Q[G](typ @4.5V): 22.0nC
Q[G](typ @4.5V): 22.0nC
更多
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.4
IRLR3705Z
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
P[tot] max: 130.0W
R[thJC] max: 1.14K/W
T[j] max: 175.0°C
V[DS] max: 55.0V
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
Package: DPAK (TO-252)
Q[gd]: 22.0nC
V[GS] max: 16.0V
R[DS (on)](@10V) max: 8.0mΩ
R[DS (on)](@4.5V) max: 12.0mΩ
V[GS(th)]: 2.0V
I[D ](@25°C) max: 89.0A
Q[G](typ @4.5V): 44.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.44