IRLU024N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel Power MOSFET in a I-Pak package
Mounting: THT
P[tot] max: 38.0W
R[thJC] max: 3.3K/W
V[DS] max: 55.0V
Package: IPAK (TO-251)
Polarity: N
Q[gd]: 5.7nC
T[j] max: 175.0°C
V[GS] max: 16.0V
R[DS (on)](@10V) max: 65.0mΩ
R[DS (on)](@4.5V) max: 110.0mΩ
V[GS(th)]: 1.5V
I[D ](@25°C) max: 17.0A
Q[G](typ @4.5V): 10.0nC
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.24
I[Dpuls] max: 92.0A
R[th]: 3.9K/W
P[tot] max: 32.0W
V[DS] max: 80.0V
Q[G](typ @10V): 6.8nC
Polarity: N
C[iss]: 470.0pF
C[oss]: 130.0pF
R[DS (on)](@10V) max: 34.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 23.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
IRFU3607
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 75V Single N-Channel Power MOSFET in a I-Pak package
Mounting: THT
P[tot] max: 140.0W
Package: IPAK (TO-251)
Polarity: N
Q[gd]: 16.0nC
R[thJC] max: 1.05K/W
T[j] max: 175.0°C
V[DS] max: 75.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 9.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 56.0nC
I[D ](@25°C) max: 80.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.42
IRFSL3306
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a TO-262 package
Mounting: THT
Package: I2PAK (TO-262)
Ptot: NoneW
RthJC: NoneK/W
VDS: NoneV
VGS: NoneV
Polarity: N
Qgd: 26.0nC
Tj: None°C
RDS (on)(@10V): NonemΩ
VGS(th): 3.0V
QG(typ @10V): 85.0nC
ID (@25°C): NoneA
Operating Temperature: None°C
Budgetary Price €/1k: 0.77
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.23
I[Dpuls] max: 212.0A
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 60.0V
Q[G](typ @10V): 25.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 440.0pF
R[DS (on)](@10V) max: 11.0mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 53.0A
V[GS(th)]: 3.0V
I[Dpuls] max: 160.0A
R[th]: 1.9K/W
P[tot] max: 66.0W
V[DS] max: 80.0V
Q[G](typ @10V): 19.0nC
Polarity: N
C[iss]: 1300.0pF
C[oss]: 350.0pF
R[DS (on)](@10V) max: 12.3mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 56.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.33
V[DS] max: 60.0V
P[tot] max: 46.0W
I[Dpuls] max: 252.0A
Q[G](typ @10V): 17.0nC
R[th]: 2.7K/W
R[thJC] max: 2.7K/W
R[thJA] max: 60.0K/W
Pin Count: 8.0Pins
Polarity: N
Mounting: SMD
C[iss]: 1200.0pF
C[oss]: 300.0pF
R[DS (on)](@10V) max: 6.8mΩ
Package: PQFN 3.3 x 3.3
I[D ](@25°C) max: 63.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.26
ISZ0602NLS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFET - perfectly addressing the needs of charger and adapter designs
I[D ](@25°C) max: 64.0A
Package: PQFN 3.3 x 3.3 Fused Lead
Polarity: N
Q[G](typ @4.5V): 11.0nC
Q[G](typ @10V): 22.0nC
R[DS (on)](@10V) max: 7.8mΩ
R[DS (on)](@4.5V) max: 9.9mΩ
V[DS] max: 80.0V
V[GS(th)]: 1.6V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.41
IRFR3806
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel Power MOSFET in a DPAK package
T[j] max: 175.0°C
Package: DPAK (TO-252)
Q[gd]: 6.3nC
V[GS] max: 20.0V
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot] max: 71.0W
R[thJC] max: 2.12K/W
V[DS] max: 60.0V
R[DS (on)](@10V) max: 15.8mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 22.0nC
I[D ](@25°C) max: 43.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.32
IRFL014N
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 55V Single N-Channel IR MOSFET in a SOT-223 package
Package: SOT-223
T[j] max: 150.0°C
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.1W
Q[gd]: 3.3nC
R[thJA] max: 120.0K/W
V[DS] max: 55.0V
V[GS] max: 20.0V
R[DS (on)](@10V) max: 160.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 7.0nC
I[D ](@25°C) max: 1.9A
Special Features: Small Power
Operating Temperature max: 150.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.17