IRF7493
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 80V Single N-Channel HEXFET Power MOSFET in a SO-8 Package
Moisture Sensitivity Level: 1
Mounting: SMD
Polarity: N
P[tot](@ T[A]=25°C) max: 2.5W
Q[gd]: 12.0nC
R[thJA] max: 50.0K/W
V[DS] max: 80.0V
V[GS] max: 20.0V
Package: SO-8
T[j] max: 150.0°C
R[DS (on)](@10V) max: 15.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 35.0nC
I[D ](@25°C) max: 9.3A
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.34
ISZ0703NLS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs
I[D ](@25°C) max: 56.0A
Package: PQFN 3.3 x 3.3 Fused Lead
Polarity: N
Q[G](typ @4.5V): 8.7nC
Q[G](typ @10V): 17.0nC
R[DS (on)](@10V) max: 7.3mΩ
R[DS (on)](@4.5V) max: 9.2mΩ
V[DS] max: 60.0V
V[GS(th)]: 1.7V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.33
ISZ0702NLS
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs
I[D ](@25°C) max: 86.0A
Package: PQFN 3.3 x 3.3 Fused Lead
Polarity: N
Q[G](typ @4.5V): 15.0nC
Q[G](typ @10V): 29.0nC
R[DS (on)](@10V) max: 4.5mΩ
R[DS (on)](@4.5V) max: 5.6mΩ
V[DS] max: 60.0V
V[GS(th)]: 1.6V
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.38
I[Dpuls] max: 92.0A
R[th]: 3.9K/W
P[tot] max: 32.0W
V[DS] max: 80.0V
Q[G](typ @10V): 6.8nC
Polarity: N
C[iss]: 564.0pF
C[oss]: 156.0pF
R[DS (on)](@10V) max: 34.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 23.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.2
I[Dpuls] max: 960.0A
R[th]: 0.8K/W
R[thJC] max: 0.8K/W
R[thJA] max: 50.0K/W
Pin Count: 8.0Pins
P[tot] max: 156.0W
V[DS] max: 60.0V
Q[G](typ @10V): 89.0nC
Polarity: N
C[iss]: 6500.0pF
C[oss]: 1500.0pF
R[DS (on)](@10V) max: 1.45mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 240.0A
V[GS(th)]: 2.8V
Operating Temperature max: 175.0°C
Special Features: Fused leads
Budgetary Price €/1k: 0.95
I[Dpuls] max: 200.0A
R[th]: 2.5K/W
P[tot] max: 50.0W
V[DS] max: 60.0V
Q[G](typ @10V): 25.0nC
Polarity: N
C[iss]: 2000.0pF
C[oss]: 440.0pF
R[DS (on)](@10V) max: 11.0mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.25
I[Dpuls] max: 200.0A
R[th]: 1.8K/W
P[tot] max: 69.0W
V[DS] max: 60.0V
Q[G](typ @10V): 37.0nC
Polarity: N
C[iss]: 3000.0pF
C[oss]: 660.0pF
R[DS (on)](@10V) max: 7.6mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 50.0A
V[GS(th)]: 3.0V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.29
IPP024N08NF2S
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: StrongIRFET™ 2 single N-channel power MOSFET 80 V in TO-220 package
I[D ](@25°C) max: 182.0A
I[Dpuls] max: 728.0A
Mounting: THT
P[tot] max: 214.0W
Package: TO-220
Pin Count: 3.0Pins
Polarity: N
Q[G](typ @10V): 89.0nC
R[DS (on)](@10V) max: 2.4mΩ
V[DS] max: 80.0V
V[GS(th)]: 3.0V
Operating Temperature max: 175.0°C
Battery voltage: 36-48 V
Budgetary Price €/1k: 1.11
I[Dpuls] max: 400.0A
R[th]: 1.1K/W
P[tot] max: 114.0W
V[DS] max: 80.0V
Q[G](typ @10V): 42.0nC
Polarity: N
C[iss]: 2900.0pF
C[oss]: 780.0pF
R[DS (on)](@10V) max: 5.7mΩ
Package: SuperSO8 5x6
I[D ](@25°C) max: 100.0A
V[GS(th)]: 2.8V
Operating Temperature max: 150.0°C
Budgetary Price €/1k: 0.55
IRFB3206
数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 60V Single N-Channel IR MOSFET™ in a TO-220AB package
Package: TO-220
Polarity: N
Q[gd]: 35.0nC
R[thJC] max: 0.5K/W
V[DS] max: 60.0V
V[GS] max: 20.0V
Mounting: THT
P[tot] max: 300.0W
T[j] max: 175.0°C
R[DS (on)](@10V) max: 3.0mΩ
V[GS(th)]: 3.0V
Q[G](typ @10V): 120.0nC
I[D ](@25°C) max: 210.0A
Operating Temperature max: 175.0°C
Budgetary Price €/1k: 0.78