BTS3405G
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: The BTS3405G is a two channel low-side power switch in PG-DSO-8-25 package providing embedded protective functions.
EAS/Avalanche Energy: 65.0mJ
I[D ]: 0.35A
I[D(lim)] min: 0.6A
Mounting: SMT
P[tot] max: 0.78W
V[DS] max: 42.0V
Load Current: 0.4A
Diagnostic Features: Output Status
Control Interface: Discrete
I[L(nom)]: 0.35A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 65.0mJ
t[off](Turn OFF time) max: 45.0µs
t[on](Turn ON time) max: 38.0µs
Classification: -
Channels: 2.0
R[DS (on)](@ Tj = 25°C): 900.0mΩ
R[DS (on)](@ Tj = 150°C) max: 2400.0mΩ
Diagnostics: -
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Protection strategy: Auto-restart
Nominal Load Current per channel: 0.35A
I[L](Short Circuit Current): 0.6A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS3410G
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 150.0mJ
I[D ]: 1.3A
I[D(lim)] min: 5.0A
Load Current: 1.3A
Mounting: SMT
P[tot] max: 0.8W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 1.3A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 150.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 2.0
R[DS (on)](@ Tj = 25°C): 190.0mΩ
R[DS (on)](@ Tj = 150°C) max: 480.0mΩ
Diagnostics: -
Protection strategy: Auto-restart
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Nominal Load Current per channel: 1.3A
I[L](Short Circuit Current): 5.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BSP75N
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 550.0mJ
Features: 24V COMPATIBLE
I[D ]: 0.7A
I[D(lim)] min: 1.0A
I[L(LIM)] min: 1.0A
Load Current: 0.7A
Mounting: SMT
P[tot] max: 1.8W
V[DS] max: 60.0V
Control Interface: Discrete
I[L(nom)]: 0.7A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 550.0mJ
t[off](Turn OFF time) max: 20.0µs
t[on](Turn ON time) max: 20.0µs
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 490.0mΩ
R[DS (on)](@ Tj = 150°C) max: 1350.0mΩ
Protection strategy: Auto-restart
Nominal Load Current per channel: 0.7A
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I[L](Short Circuit Current): 1.0A
Recommended Operating Voltage max: 60.0V
Family: Classic HITFET™
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS3800SL
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: The BTS3800SL is a single channel Low Side power switch with embedded protective functions in PG-SCT595 package.
EAS/Avalanche Energy: 65.0mJ
I[D ]: 0.35A
I[SC] max: 1.5A
Mounting: SMT
V[DS] max: 41.0V
Load Current: 0.52A
Control Interface: Discrete
I[L(nom)]: 0.52A
Recommended Operating Voltage max: 41.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 65.0mJ
t[off](Turn OFF time) max: 5.0µs
t[on](Turn ON time) max: 5.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 800.0mΩ
R[DS (on)](@ Tj = 150°C) max: 1600.0mΩ
Diagnostics: -
Protection strategy: Latch
Nominal Load Current per channel: 0.52A
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I[L](Short Circuit Current): 0.75A
Currently planned availability until at least: 2037
Family: Classic HITFET™ 12V
BTS117
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.
EAS/Avalanche Energy: 1000.0mJ
Features: 24V COMPATIBLE
I[D ]: 3.5A
I[D(lim)] min: 7.0A
I[L(LIM)] min: 7.0A
Load Current: 3.5A
Mounting: THT
P[tot] max: 50.0W
V[DS] max: 60.0V
I[L(nom)]: 3.5A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 1000.0mJ
t[off](Turn OFF time) max: 150.0µs
t[on](Turn ON time) max: 70.0µs
Family: Classic HITFET™
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Protection strategy: Latch
Nominal Load Current per channel: 3.5A
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I[L](Short Circuit Current): 7.0A
Recommended Operating Voltage max: 60.0V
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS117TC
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.
EAS/Avalanche Energy: 1000.0mJ
I[D ]: 3.5A
I[D(lim)] min: 7.0A
I[L(LIM)] min: 7.0A
Load Current: 3.5A
Mounting: SMT
P[tot] max: 50.0W
V[DS] max: 60.0V
I[L(nom)]: 3.5A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 1000.0mJ
t[off](Turn OFF time) max: 150.0µs
t[on](Turn ON time) max: 70.0µs
Family: Classic HITFET™
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Protection strategy: Latch
Nominal Load Current per channel: 3.5A
I[L](Short Circuit Current): 7.0A
更多
Recommended Operating Voltage max: 60.0V
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS133
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.
EAS/Avalanche Energy: 2000.0mJ
Features: 24V COMPATIBLE
I[D ]: 3.8A
I[D(lim)] min: 21.0A
I[L(LIM)] min: 21.0A
I[SC] max: 64.0A
Load Current: 3.8A
Mounting: THT
P[tot] max: 90.0W
V[DS] max: 60.0V
I[L(nom)]: 3.8A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 2000.0mJ
t[off](Turn OFF time) max: 170.0µs
t[on](Turn ON time) max: 100.0µs
Family: Classic HITFET™
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 50.0mΩ
R[DS (on)](@ Tj = 150°C) max: 120.0mΩ
Protection strategy: Latch
更多
Nominal Load Current per channel: 3.8A
I[L](Short Circuit Current): 21.0A
Recommended Operating Voltage max: 60.0V
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS141
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.
EAS/Avalanche Energy: 4000.0mJ
Features: 24V COMPATIBLE
I[D ]: 5.1A
I[D(lim)] min: 25.0A
I[L(LIM)] min: 25.0A
Load Current: 5.1A
Mounting: THT
P[tot] max: 149.0W
V[DS] max: 60.0V
I[L(nom)]: 12.0A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 4000.0mJ
t[off](Turn OFF time) max: 170.0µs
t[on](Turn ON time) max: 100.0µs
Family: Classic HITFET™
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 31.0mΩ
R[DS (on)](@ Tj = 150°C) max: 68.0mΩ
Protection strategy: Latch
Nominal Load Current per channel: 5.1A
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I[L](Short Circuit Current): 25.0A
Recommended Operating Voltage max: 60.0V
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS141TC
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.
EAS/Avalanche Energy: 4000.0mJ
I[D ]: 5.1A
I[D(lim)] min: 25.0A
I[L(LIM)] min: 25.0A
Load Current: 5.1A
Mounting: SMT
P[tot] max: 149.0W
V[DS] max: 60.0V
I[L(nom)]: 5.1A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 4000.0mJ
t[off](Turn OFF time) max: 170.0µs
t[on](Turn ON time) max: 100.0µs
Family: Classic HITFET™
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 31.0mΩ
R[DS (on)](@ Tj = 150°C) max: 68.0mΩ
Protection strategy: Latch
Nominal Load Current per channel: 5.1A
I[L](Short Circuit Current): 25.0A
更多
Recommended Operating Voltage max: 60.0V
Classification: n.a
Currently planned availability until at least: n.a
Diagnostics: n.a
BTS3028SDL
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: The BTS3028SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.
EAS/Avalanche Energy: 350.0mJ
Features: 24V COMPATIBLE
I[D ]: 5.0A
I[D(lim)] min: 18.0A
I[L(LIM)] min: 18.0A
Mounting: SMT
V[DS] max: 60.0V
Load Current: 5.8A
Diagnostic Features: Output Status
Control Interface: Discrete
I[L(nom)]: 5.0A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 350.0mJ
t[off](Turn OFF time) max: 120.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 32.0mΩ
R[DS (on)](@ Tj = 150°C) max: 91.0mΩ
Diagnostics: -
更多
Protection strategy: Latch
Nominal Load Current per channel: 5.0A
I[L](Short Circuit Current): 18.0A
Recommended Operating Voltage max: 60.0V
Family: Classic HITFET™ 24V
Currently planned availability until at least: 2038