AD8421BRZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 3 NV/√HZ、低功耗仪表放大器

Product Lifecycle: 推荐用于新设计 # of Amps: 1 Vos (max): 25µV Vos TC (max): 200nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 10MHz Ibias (max): 500pA Input Voltage Noise (typ): 3nV/rtHz Iq/Amp (max): 2.3mA Vs span (min): 5V Vs span (max): 36V Slew Rate (typ): 35V/us Short Circuit Current: 65mA 0.1 to 10 Hz VNoise (typ): 70nV p-p Ibias TC (typ): 50pA/°C CMRR - Low Gain (min): 94dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 200fA/rtHz
In V+ Headroom (max): 1.8V In V- Headroom (max): 2.3V Out V+ Headroom (max): 1.6V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 60nV/rtHz Gain TC - Low Gain (max): 1ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 18pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 9mm² (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm² Package Height: 0.8mm (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm Launch Date: 2012-05-03 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 3pF Ccm (typ): 3pF Rdiff (typ): 30GOhms Rcm (typ): 30GOhms Output Type: Single Ended Iq/Amp (typ): 2mA

AD8421BRZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 3 NV/√HZ、低功耗仪表放大器

Product Lifecycle: 推荐用于新设计 # of Amps: 1 Vos (max): 25µV Vos TC (max): 200nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 10MHz Ibias (max): 500pA Input Voltage Noise (typ): 3nV/rtHz Iq/Amp (max): 2.3mA Vs span (min): 5V Vs span (max): 36V Slew Rate (typ): 35V/us Short Circuit Current: 65mA 0.1 to 10 Hz VNoise (typ): 70nV p-p Ibias TC (typ): 50pA/°C CMRR - Low Gain (min): 94dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 200fA/rtHz
In V+ Headroom (max): 1.8V In V- Headroom (max): 2.3V Out V+ Headroom (max): 1.6V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 60nV/rtHz Gain TC - Low Gain (max): 1ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 18pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 9mm² (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm² Package Height: 0.8mm (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm Launch Date: 2012-05-03 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 3pF Ccm (typ): 3pF Rdiff (typ): 30GOhms Rcm (typ): 30GOhms Output Type: Single Ended Iq/Amp (typ): 2mA

AD8421BRZ-RL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 3 NV/√HZ、低功耗仪表放大器

Product Lifecycle: 推荐用于新设计 # of Amps: 1 Vos (max): 25µV Vos TC (max): 200nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 10MHz Ibias (max): 500pA Input Voltage Noise (typ): 3nV/rtHz Iq/Amp (max): 2.3mA Vs span (min): 5V Vs span (max): 36V Slew Rate (typ): 35V/us Short Circuit Current: 65mA 0.1 to 10 Hz VNoise (typ): 70nV p-p Ibias TC (typ): 50pA/°C CMRR - Low Gain (min): 94dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 200fA/rtHz
In V+ Headroom (max): 1.8V In V- Headroom (max): 2.3V Out V+ Headroom (max): 1.6V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 60nV/rtHz Gain TC - Low Gain (max): 1ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 18pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 9mm² (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm² Package Height: 0.8mm (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm Launch Date: 2012-05-03 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 3pF Ccm (typ): 3pF Rdiff (typ): 30GOhms Rcm (typ): 30GOhms Output Type: Single Ended Iq/Amp (typ): 2mA

AD8421TRMZ-EP


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 3 NV/√HZ、低功耗仪表放大器

Product Lifecycle: 推荐用于新设计 # of Amps: 1 Vos (max): 25µV Vos TC (max): 200nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 10MHz Ibias (max): 500pA Input Voltage Noise (typ): 3nV/rtHz Iq/Amp (max): 2.3mA Vs span (min): 5V Vs span (max): 36V Slew Rate (typ): 35V/us Short Circuit Current: 65mA 0.1 to 10 Hz VNoise (typ): 70nV p-p Ibias TC (typ): 50pA/°C CMRR - Low Gain (min): 94dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 200fA/rtHz
In V+ Headroom (max): 1.8V In V- Headroom (max): 2.3V Out V+ Headroom (max): 1.6V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 60nV/rtHz Gain TC - Low Gain (max): 1ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 18pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 9mm² (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm² Package Height: 0.8mm (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm Launch Date: 2012-05-03 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 3pF Ccm (typ): 3pF Rdiff (typ): 30GOhms Rcm (typ): 30GOhms Output Type: Single Ended Iq/Amp (typ): 2mA

AD8421TRMZ-EP-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 3 NV/√HZ、低功耗仪表放大器

Product Lifecycle: 推荐用于新设计 # of Amps: 1 Vos (max): 25µV Vos TC (max): 200nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 10000V/V BW - low gain (typ): 10MHz Ibias (max): 500pA Input Voltage Noise (typ): 3nV/rtHz Iq/Amp (max): 2.3mA Vs span (min): 5V Vs span (max): 36V Slew Rate (typ): 35V/us Short Circuit Current: 65mA 0.1 to 10 Hz VNoise (typ): 70nV p-p Ibias TC (typ): 50pA/°C CMRR - Low Gain (min): 94dB CMRR - High Gain (min): 140dB Current Noise Density (typ): 200fA/rtHz
In V+ Headroom (max): 1.8V In V- Headroom (max): 2.3V Out V+ Headroom (max): 1.6V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 60nV/rtHz Gain TC - Low Gain (max): 1ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 18pA p-p Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 9mm² (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm² Package Height: 0.8mm (8-Lead LFCSP (3mm x 3mm w/ EP)) (AD8421ACPZ-R7)mm Launch Date: 2012-05-03 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 3pF Ccm (typ): 3pF Rdiff (typ): 30GOhms Rcm (typ): 30GOhms Output Type: Single Ended Iq/Amp (typ): 2mA

AD8428ARZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 低噪声、低增益漂移、G = 2000 仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Fixed Gain Gain (min): 2000V/V Gain (max): 2000V/V BW - low gain (typ): 3.5MHz Ibias (max): 50nA Input Voltage Noise (typ): 1.3nV/rtHz Iq/Amp (max): 6.8mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 50V/us Short Circuit Current: 30mA 0.1 to 10 Hz VNoise (typ): 40nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 140dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 1.5pA/rtHz In V+ Headroom (max): 2.5V In V- Headroom (max): 2.5V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.7V Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 5ppm/°C Gain Error - High Gain (max): 0.05% Gain Error - Low Gain (max): 0.05% Ios (max): 10nA Ios drift (typ): 20pA/°C 0.1 to 10 Hz Current Noise (typ): 150pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 31mm² (8-Lead SOIC) (AD8428ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8428ARZ)mm Launch Date: 2011-10-24 EP: No Design Tools: In-Amp Diamond Plot Tool Amp Features: Filter Option Cdiff (typ): 1pF Ccm (typ): 4pF Rdiff (typ): 2GOhms Rcm (typ): 500MOhms Output Type: Single Ended Iq/Amp (typ): 6.5mA

AD8428ARZ-RL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 低噪声、低增益漂移、G = 2000 仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Fixed Gain Gain (min): 2000V/V Gain (max): 2000V/V BW - low gain (typ): 3.5MHz Ibias (max): 50nA Input Voltage Noise (typ): 1.3nV/rtHz Iq/Amp (max): 6.8mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 50V/us Short Circuit Current: 30mA 0.1 to 10 Hz VNoise (typ): 40nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 140dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 1.5pA/rtHz In V+ Headroom (max): 2.5V In V- Headroom (max): 2.5V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.7V Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 5ppm/°C Gain Error - High Gain (max): 0.05% Gain Error - Low Gain (max): 0.05% Ios (max): 10nA Ios drift (typ): 20pA/°C 0.1 to 10 Hz Current Noise (typ): 150pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 31mm² (8-Lead SOIC) (AD8428ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8428ARZ)mm Launch Date: 2011-10-24 EP: No Design Tools: In-Amp Diamond Plot Tool Amp Features: Filter Option Cdiff (typ): 1pF Ccm (typ): 4pF Rdiff (typ): 2GOhms Rcm (typ): 500MOhms Output Type: Single Ended Iq/Amp (typ): 6.5mA

AD8428BRZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 低噪声、低增益漂移、G = 2000 仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Fixed Gain Gain (min): 2000V/V Gain (max): 2000V/V BW - low gain (typ): 3.5MHz Ibias (max): 50nA Input Voltage Noise (typ): 1.3nV/rtHz Iq/Amp (max): 6.8mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 50V/us Short Circuit Current: 30mA 0.1 to 10 Hz VNoise (typ): 40nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 140dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 1.5pA/rtHz In V+ Headroom (max): 2.5V In V- Headroom (max): 2.5V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.7V Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 5ppm/°C Gain Error - High Gain (max): 0.05% Gain Error - Low Gain (max): 0.05% Ios (max): 10nA Ios drift (typ): 20pA/°C 0.1 to 10 Hz Current Noise (typ): 150pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 31mm² (8-Lead SOIC) (AD8428ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8428ARZ)mm Launch Date: 2011-10-24 EP: No Design Tools: In-Amp Diamond Plot Tool Amp Features: Filter Option Cdiff (typ): 1pF Ccm (typ): 4pF Rdiff (typ): 2GOhms Rcm (typ): 500MOhms Output Type: Single Ended Iq/Amp (typ): 6.5mA

AD8428BRZ-RL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 低噪声、低增益漂移、G = 2000 仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 8-Lead SOIC # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Fixed Gain Gain (min): 2000V/V Gain (max): 2000V/V BW - low gain (typ): 3.5MHz Ibias (max): 50nA Input Voltage Noise (typ): 1.3nV/rtHz Iq/Amp (max): 6.8mA Vs span (min): 8V Vs span (max): 36V Slew Rate (typ): 50V/us Short Circuit Current: 30mA 0.1 to 10 Hz VNoise (typ): 40nV p-p Ibias TC (typ): 250pA/°C CMRR - Low Gain (min): 140dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 1.5pA/rtHz In V+ Headroom (max): 2.5V In V- Headroom (max): 2.5V Out V+ Headroom (max): 1.2V Out V- Headroom (max): 1.7V Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 5ppm/°C Gain Error - High Gain (max): 0.05% Gain Error - Low Gain (max): 0.05% Ios (max): 10nA Ios drift (typ): 20pA/°C 0.1 to 10 Hz Current Noise (typ): 150pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 31mm² (8-Lead SOIC) (AD8428ARZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8428ARZ)mm Launch Date: 2011-10-24 EP: No Design Tools: In-Amp Diamond Plot Tool Amp Features: Filter Option Cdiff (typ): 1pF Ccm (typ): 4pF Rdiff (typ): 2GOhms Rcm (typ): 500MOhms Output Type: Single Ended Iq/Amp (typ): 6.5mA

AD8426ACPZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 推荐用于新设计 Package: 16-Lead LFCSP (4mm x 4mm x 0.85mm) # of Amps: 2 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 1.5MHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 600mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 400nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 700mV Out V- Headroom (max): 400mV Output Voltage Noise (typ): 120nV/rtHz Gain TC - Low Gain (max): 2ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.1% Gain Error - Low Gain (max): 0.01% Ios (max): 500pA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Reference circuit Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16mm² (16-Lead LFCSP (4mm x 4mm x 0.85mm)) (AD8426ACPZ-R7)mm² Package Height: 1mm (16-Lead LFCSP (4mm x 4mm x 0.85mm)) (AD8426ACPZ-R7)mm Launch Date: 2011-06-16 EP: No Design Tools: In-Amp Diamond Plot Tool Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA