AD8229-KGD-CHIPS


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HDZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HRZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

AD8229HRZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 1NV/√HZ低噪声、210°C仪表放大器

Product Lifecycle: 量产 Package: 8-Lead Side Brazed CerDIP,CHIPS OR DIE,8-Lead SOIC # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 15MHz Ibias (max): 70nA Input Voltage Noise (typ): 1nV/rtHz Iq/Amp (max): 7mA Vs span (min): 8V Vs span (max): 34V Slew Rate (typ): 22V/us Short Circuit Current: 35mA 0.1 to 10 Hz VNoise (typ): 100nV p-p CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 134dB Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 2.5V In V- Headroom (max): 2.8V Out V+ Headroom (max): 1.5V Out V- Headroom (max): 1.9V Output Voltage Noise (typ): 45nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.3% Gain Error - Low Gain (max): 0.03% Ios (max): 35nA 0.1 to 10 Hz Current Noise (typ): 100pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,High Temp Temp Range: -40 to 210°C Package Area: 31mm² (8-Lead SOIC) (AD8229HRZ)mm² Package Height: 1.75mm (8-Lead SOIC) (AD8229HRZ)mm Launch Date: 2011-02-03 EP: No Design Tools: In-Amp Diamond Plot Tool Cdiff (typ): 1.5pF Ccm (typ): 6pF Rdiff (typ): 3GOhms Rcm (typ): 750MOhms Output Type: Single Ended Iq/Amp (typ): 6.7mA

1PAD8227BRZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA

AD8227ARMZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA

AD8227ARMZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA

AD8227ARMZ-RL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA

AD8227ARZ


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA

AD8227ARZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 宽电源电压范围、轨到轨输出仪表放大器

Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,N/A # of Amps: 1 Vos (max): 100µV Vos TC (max): 1µV/°C Gain Set: Resistor Gain (min): 5V/V Gain (max): 1000V/V BW - low gain (typ): 250kHz Ibias (max): 27nA Input Voltage Noise (typ): 24nV/rtHz Iq/Amp (max): 425µA Vs span (min): 2.2V Vs span (max): 36V Slew Rate (typ): 800mV/us Short Circuit Current: 13mA 0.1 to 10 Hz VNoise (typ): 500nV p-p Ibias TC (typ): 70pA/°C CMRR - Low Gain (min): 100dB CMRR - High Gain (min): 110dB
Current Noise Density (typ): 100fA/rtHz In V+ Headroom (max): 800mV In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 200mV Output Voltage Noise (typ): 310nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 100ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 1.5nA Ios drift (typ): 5pA/°C Rail to Rail: Output 0.1 to 10 Hz Current Noise (typ): 3pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8227ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8227ARMZ)mm Launch Date: 2009-06-04 EP: No Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: Over Voltage Protection (OVP) Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 800MOhms Rcm (typ): 400MOhms Output Type: Single Ended Iq/Amp (typ): 350µA