AD8220WARMZ-R7


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 具有轨到轨输出的JFET输入仪表放大器

Product Lifecycle: 量产 Package: 8-Lead MSOP # of Amps: 1 Vos (max): 125µV Vos TC (max): 5µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 1.5MHz Ibias (max): 10pA Input Voltage Noise (typ): 14nV/rtHz Iq/Amp (max): 750µA Vs span (min): 4.5V Vs span (max): 36V Short Circuit Current: 15mA 0.1 to 10 Hz VNoise (typ): 800nV p-p Ibias TC (typ): 100nA/°C CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 100dB Current Noise Density (typ): 1fA/rtHz
In V+ Headroom (max): 2V In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 300mV Output Voltage Noise (typ): 90nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.2% Gain Error - Low Gain (max): 0.04% Ios (max): 600fA Ios drift (typ): 10nA/°C Rail to Rail: Output Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: Yes Reliability Level: Automotive,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8220ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8220ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: JFET Input Cdiff (typ): 2.5pF Ccm (typ): 10pF Rdiff (typ): 20TOhms Rcm (typ): 5TOhms Output Type: Single Ended Iq/Amp (typ): 750µA

AD8220WARMZ-RL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器

描述: 具有轨到轨输出的JFET输入仪表放大器

Product Lifecycle: 量产 Package: 8-Lead MSOP # of Amps: 1 Vos (max): 125µV Vos TC (max): 5µV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 1.5MHz Ibias (max): 10pA Input Voltage Noise (typ): 14nV/rtHz Iq/Amp (max): 750µA Vs span (min): 4.5V Vs span (max): 36V Short Circuit Current: 15mA 0.1 to 10 Hz VNoise (typ): 800nV p-p Ibias TC (typ): 100nA/°C CMRR - Low Gain (min): 86dB CMRR - High Gain (min): 100dB Current Noise Density (typ): 1fA/rtHz
In V+ Headroom (max): 2V In V- Headroom (max): -100mV Out V+ Headroom (max): 300mV Out V- Headroom (max): 300mV Output Voltage Noise (typ): 90nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.2% Gain Error - Low Gain (max): 0.04% Ios (max): 600fA Ios drift (typ): 10nA/°C Rail to Rail: Output Eval / Ref Circuit: Evaluation board, Reference circuit Export Classification: EAR99 Automotive: Yes Reliability Level: Automotive,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8220ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8220ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Amp Features: JFET Input Cdiff (typ): 2.5pF Ccm (typ): 10pF Rdiff (typ): 20TOhms Rcm (typ): 5TOhms Output Type: Single Ended Iq/Amp (typ): 750µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA
Product Lifecycle: 量产 Package: 8-Lead SOIC,8-Lead MSOP,CHIPS OR DIE # of Amps: 1 Vos (max): 25µV Vos TC (max): 300nV/°C Gain Set: Resistor Gain (min): 1V/V Gain (max): 1000V/V BW - low gain (typ): 825kHz Ibias (max): 400pA Input Voltage Noise (typ): 8nV/rtHz Iq/Amp (max): 1.2mA Vs span (min): 4.6V Vs span (max): 36V Slew Rate (typ): 2V/us Short Circuit Current: 18mA 0.1 to 10 Hz VNoise (typ): 250nV p-p Ibias TC (typ): 1pA/°C CMRR - Low Gain (min): 90dB CMRR - High Gain (min): 140dB
Current Noise Density (typ): 40fA/rtHz In V+ Headroom (max): 1.2V In V- Headroom (max): 1.9V Out V+ Headroom (max): 1.4V Out V- Headroom (max): 1.2V Output Voltage Noise (typ): 75nV/rtHz Gain TC - Low Gain (max): 5ppm/°C Gain TC - High Gain (max): 50ppm/°C Gain Error - High Gain (max): 0.15% Gain Error - Low Gain (max): 0.02% Ios (max): 400pA Ios drift (typ): 1pA/°C 0.1 to 10 Hz Current Noise (typ): 6pA p-p Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Reliability Level: DIE,EP Temp Range: -55 to 125°C Package Area: 16.48mm² (8-Lead MSOP) (AD8221ARMZ)mm² Package Height: 1.1mm (8-Lead MSOP) (AD8221ARMZ)mm Launch Date: 2008-02-25 EP: Yes Design Tools: In-Amp Diamond Plot Tool, LTspice Cdiff (typ): 2pF Ccm (typ): 2pF Rdiff (typ): 100GOhms Rcm (typ): 100GOhms Output Type: Single Ended Iq/Amp (typ): 900µA