Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 160µV
Vos TC (max): 2µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 370kHz
Ibias (max): 8nA
Input Voltage Noise (typ): 43nV/rtHz
Iq/Amp (max): 130µA
Vs span (min): 2.3V
Vs span (max): 44V
Slew Rate (typ): 100mV/us
0.1 to 10 Hz VNoise (typ): 900nV p-p
CMRR - High Gain (min): 112dB
Current Noise Density (typ): 60fA/rtHz
In V+ Headroom (max): 2V
Out V- Headroom (max): 7V
更多
Ios (max): 600pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1101ACN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LT1101ISW#PBF)mm
Launch Date: 1995-03-16
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Rdiff (typ): 12GOhms
Rcm (typ): 7GOhms
Output Type: Single Ended
Iq/Amp (typ): 92µA
LT1102ACN8#PBF
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
描述: LT1102 - 高速、精准、JFET 输入仪表放大器 (固定增益 = 10 或 100)
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch)
# of Amps: 1
Vos (max): 600µV
Vos TC (max): 8µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 35MHz
Ibias (max): 40pA
Input Voltage Noise (typ): 19nV/rtHz
Iq/Amp (max): 5mA
Vs span (min): 18V
Vs span (max): 40V
Slew Rate (typ): 30V/us
0.1 to 10 Hz VNoise (typ): 2.8µV p-p
CMRR - High Gain (min): 98dB
Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 4.5V
Out V- Headroom (max): 2V
更多
Ios (max): 40pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm²
Package Height: 3.3mm (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm
Launch Date: 1990-04-01
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Amp Features: JFET Input
Rdiff (typ): 1TOhms
Rcm (typ): 1TOhms
Output Type: Single Ended
Iq/Amp (typ): 3.3mA
LT1102CN8#PBF
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
描述: LT1102 - 高速、精准、JFET 输入仪表放大器 (固定增益 = 10 或 100)
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch)
# of Amps: 1
Vos (max): 600µV
Vos TC (max): 8µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 35MHz
Ibias (max): 40pA
Input Voltage Noise (typ): 19nV/rtHz
Iq/Amp (max): 5mA
Vs span (min): 18V
Vs span (max): 40V
Slew Rate (typ): 30V/us
0.1 to 10 Hz VNoise (typ): 2.8µV p-p
CMRR - High Gain (min): 98dB
Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 4.5V
Out V- Headroom (max): 2V
更多
Ios (max): 40pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm²
Package Height: 3.3mm (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm
Launch Date: 1990-04-01
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Amp Features: JFET Input
Rdiff (typ): 1TOhms
Rcm (typ): 1TOhms
Output Type: Single Ended
Iq/Amp (typ): 3.3mA
LT1102IN8#PBF
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 仪用放大器
描述: LT1102 - 高速、精准、JFET 输入仪表放大器 (固定增益 = 10 或 100)
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch)
# of Amps: 1
Vos (max): 600µV
Vos TC (max): 8µV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 35MHz
Ibias (max): 40pA
Input Voltage Noise (typ): 19nV/rtHz
Iq/Amp (max): 5mA
Vs span (min): 18V
Vs span (max): 40V
Slew Rate (typ): 30V/us
0.1 to 10 Hz VNoise (typ): 2.8µV p-p
CMRR - High Gain (min): 98dB
Current Noise Density (typ): 1.5pA/rtHz
In V+ Headroom (max): 4.5V
Out V- Headroom (max): 2V
更多
Ios (max): 40pA
Export Classification: EAR99
Automotive: No
Temp Range: -40 to 85°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm²
Package Height: 3.3mm (8-Lead PDIP (Narrow 0.3 Inch)) (LT1102ACN8#PBF)mm
Launch Date: 1990-04-01
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Amp Features: JFET Input
Rdiff (typ): 1TOhms
Rcm (typ): 1TOhms
Output Type: Single Ended
Iq/Amp (typ): 3.3mA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 10µV
Vos TC (max): 100nV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 1.8MHz
Ibias (max): 50pA
Input Voltage Noise (typ): 35nV/rtHz
Iq/Amp (max): 2.8mA
Vs span (min): 4.75V
Vs span (max): 18V
Slew Rate (typ): 3V/us
0.1 to 10 Hz VNoise (typ): 1.9µV p-p
CMRR - Low Gain (min): 104dB
CMRR - High Gain (min): 104dB
In V+ Headroom (max): 2.7V
In V- Headroom (max): 300mV
更多
Out V+ Headroom (max): 500mV
Out V- Headroom (max): 300mV
Gain Error - Low Gain (max): 0.05%
Ios (max): 50pA
Rail to Rail: Output
Export Classification: EAR99
Automotive: No
Temp Range: 0 to 70°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LTC1100CN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LTC1100CSW#PBF)mm
Launch Date: 1990-01-01
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Output Type: Single Ended
Iq/Amp (typ): 2.4mA
Product Lifecycle: 量产
Package: 8-Lead PDIP (Narrow 0.3 Inch),16-Lead SOIC (Wide 0.3 Inch)
# of Amps: 1
Vos (max): 10µV
Vos TC (max): 100nV/°C
Gain Set: Fixed Gain
Gain (min): 10V/V
Gain (max): 100V/V
BW - low gain (typ): 1.8MHz
Ibias (max): 50pA
Input Voltage Noise (typ): 35nV/rtHz
Iq/Amp (max): 2.8mA
Vs span (min): 4.75V
Vs span (max): 18V
Slew Rate (typ): 3V/us
0.1 to 10 Hz VNoise (typ): 1.9µV p-p
CMRR - Low Gain (min): 104dB
CMRR - High Gain (min): 104dB
In V+ Headroom (max): 2.7V
In V- Headroom (max): 300mV
更多
Out V+ Headroom (max): 500mV
Out V- Headroom (max): 300mV
Gain Error - Low Gain (max): 0.05%
Ios (max): 50pA
Rail to Rail: Output
Export Classification: EAR99
Automotive: No
Temp Range: 0 to 70°C
Package Area: 65.7352mm² (8-Lead PDIP (Narrow 0.3 Inch)) (LTC1100CN8#PBF)mm²
Package Height: 2.64mm (16-Lead SOIC (Wide 0.3 Inch)) (LTC1100CSW#PBF)mm
Launch Date: 1990-01-01
EP: No
Design Tools: In-Amp Diamond Plot Tool, LTspice
Output Type: Single Ended
Iq/Amp (typ): 2.4mA