ADL8106CHIPS


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分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT 低噪声放大器,20 GHz 至 54 GHz

RF Primary Function: Driver Amp, LNA, Wideband Distributed Amps Freq Response RF (min): 18GHz Freq Response RF (max): 54GHz Gain dB (typ): 21.5dB OP1dB (typ): 14.5dBm NF (typ): 3.5dB OIP3 (typ): 21.5dBm Vs (typ): 3V Is (typ): 120mA Package: CHIPS OR DIE,24-terminal LGA_CAV (5 mm x 5 mm x 1.60 mm) Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 2V Vs+ (max): 3.5V Gain dB (min): 19dB Specified at Freq: 44GHz Eval / Ref Circuit: Evaluation board Export Classification: 3A001.b.2.d Automotive: No Temp Range: -40 to 85°C
Launch Date: 2022-09-02 EP: No

ADL8106CHIPS-SX


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT 低噪声放大器,20 GHz 至 54 GHz

RF Primary Function: Driver Amp, LNA, Wideband Distributed Amps Freq Response RF (min): 18GHz Freq Response RF (max): 54GHz Gain dB (typ): 21.5dB OP1dB (typ): 14.5dBm NF (typ): 3.5dB OIP3 (typ): 21.5dBm Vs (typ): 3V Is (typ): 120mA Package: CHIPS OR DIE,24-terminal LGA_CAV (5 mm x 5 mm x 1.60 mm) Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 2V Vs+ (max): 3.5V Gain dB (min): 19dB Specified at Freq: 44GHz Eval / Ref Circuit: Evaluation board Export Classification: 3A001.b.2.d Automotive: No Temp Range: -40 to 85°C
Launch Date: 2022-09-02 EP: No

ADH395-701G8


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分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 航空航天 InGaP HBT 增益模块放大器,直流 – 4 GHz

RF Primary Function: Gain Block Freq Response RF (max): 4GHz Gain dB (typ): 15dB OP1dB (typ): 15dBm NF (typ): 4.5dB OIP3 (typ): 28dBm Vs (typ): 5V Is (typ): 54mA Package: 8-Lead Flatpack,CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4.5V Vs+ (max): 7V Export Classification: EAR99 Automotive: No Reliability Level: Class S Package Area: 43.61282mm² (8-Lead Flatpack) (ADH395-701G8)mm² Package Height: 2.3114mm (8-Lead Flatpack) (ADH395-701G8)mm Launch Date: 2019-08-15 EP: No

HMC8674


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: 航空航天 InGaP HBT 增益模块放大器,直流 – 4 GHz

RF Primary Function: Gain Block Freq Response RF (max): 4GHz Gain dB (typ): 15dB OP1dB (typ): 15dBm NF (typ): 4.5dB OIP3 (typ): 28dBm Vs (typ): 5V Is (typ): 54mA Package: 8-Lead Flatpack,CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4.5V Vs+ (max): 7V Export Classification: EAR99 Automotive: No Reliability Level: Class S Package Area: 43.61282mm² (8-Lead Flatpack) (ADH395-701G8)mm² Package Height: 2.3114mm (8-Lead Flatpack) (ADH395-701G8)mm Launch Date: 2019-08-15 EP: No

HMC1082CHIP


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT MMIC中等功耗放大器,5.5 - 18 GHz

RF Primary Function: Driver Amp Freq Response RF (min): 5.5GHz Freq Response RF (max): 18GHz Gain dB (typ): 22dB OP1dB (typ): 24dBm OIP3 (typ): 35dBm Vs (typ): 5V Is (typ): 220mA Package: 24-Lead QFN (4mm x 4mm w/ EP),CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4V Vs+ (max): 5V Gain dB (min): 22dB Gain dB (max): 24dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16mm² (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm²
Package Height: 0.92mm (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm Launch Date: 2019-06-26 EP: No

HMC1082C-KIT


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT MMIC中等功耗放大器,5.5 - 18 GHz

RF Primary Function: Driver Amp Freq Response RF (min): 5.5GHz Freq Response RF (max): 18GHz Gain dB (typ): 22dB OP1dB (typ): 24dBm OIP3 (typ): 35dBm Vs (typ): 5V Is (typ): 220mA Package: 24-Lead QFN (4mm x 4mm w/ EP),CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4V Vs+ (max): 5V Gain dB (min): 22dB Gain dB (max): 24dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16mm² (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm²
Package Height: 0.92mm (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm Launch Date: 2019-06-26 EP: No

HMC1082LP4E


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT MMIC中等功耗放大器,5.5 - 18 GHz

RF Primary Function: Driver Amp Freq Response RF (min): 5.5GHz Freq Response RF (max): 18GHz Gain dB (typ): 22dB OP1dB (typ): 24dBm OIP3 (typ): 35dBm Vs (typ): 5V Is (typ): 220mA Package: 24-Lead QFN (4mm x 4mm w/ EP),CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4V Vs+ (max): 5V Gain dB (min): 22dB Gain dB (max): 24dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16mm² (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm²
Package Height: 0.92mm (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm Launch Date: 2019-06-26 EP: No

HMC1082LP4ETR


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs pHEMT MMIC中等功耗放大器,5.5 - 18 GHz

RF Primary Function: Driver Amp Freq Response RF (min): 5.5GHz Freq Response RF (max): 18GHz Gain dB (typ): 22dB OP1dB (typ): 24dBm OIP3 (typ): 35dBm Vs (typ): 5V Is (typ): 220mA Package: 24-Lead QFN (4mm x 4mm w/ EP),CHIPS OR DIE Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 4V Vs+ (max): 5V Gain dB (min): 22dB Gain dB (max): 24dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -40 to 85°C Package Area: 16mm² (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm²
Package Height: 0.92mm (24-Lead QFN (4mm x 4mm w/ EP)) (HMC1082LP4E)mm Launch Date: 2019-06-26 EP: No

HMC637BPM5E


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、单正电源、DC至6 GHz、1 W功率放大器

RF Primary Function: Low Phase Noise, Power Amp, Wideband Distributed Amps Freq Response RF (max): 7.5GHz Gain dB (typ): 15.5dB OP1dB (typ): 28dBm NF (typ): 3.5dB OIP3 (typ): 39dBm Vs (typ): 12V Is (typ): 345mA Residual Phase Noise (typ): -163dBc/Hz Package: 32-Lead LFCSP (5mm x 5mm w/ EP) Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -55 to 85°C Package Area: 25mm² (32-Lead LFCSP (5mm x 5mm w/ EP)) (HMC637BPM5E)mm²
Package Height: 1.25mm (32-Lead LFCSP (5mm x 5mm w/ EP)) (HMC637BPM5E)mm Launch Date: 2018-05-07 EP: No

HMC637BPM5ETR


数据:
分类: 微电路 / 微波半导体集成电路 / 放大器 / 宽带放大器

描述: GaAs、pHEMT、MMIC、单正电源、DC至6 GHz、1 W功率放大器

RF Primary Function: Low Phase Noise, Power Amp, Wideband Distributed Amps Freq Response RF (max): 7.5GHz Gain dB (typ): 15.5dB OP1dB (typ): 28dBm NF (typ): 3.5dB OIP3 (typ): 39dBm Vs (typ): 12V Is (typ): 345mA Residual Phase Noise (typ): -163dBc/Hz Package: 32-Lead LFCSP (5mm x 5mm w/ EP) Product Lifecycle: 推荐用于新设计 # of Channels: 1 Vs+ (min): 8V Vs+ (max): 13V Gain dB (min): 12.5dB Eval / Ref Circuit: Evaluation board Export Classification: EAR99 Automotive: No Temp Range: -55 to 85°C Package Area: 25mm² (32-Lead LFCSP (5mm x 5mm w/ EP)) (HMC637BPM5E)mm²
Package Height: 1.25mm (32-Lead LFCSP (5mm x 5mm w/ EP)) (HMC637BPM5E)mm Launch Date: 2018-05-07 EP: No