AFGY120T65SPD-B4
制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 绝缘栅双极型晶体管
描述: IGBT – 带VCESAT和VTH分档的650V、120A 场截止型沟槽式IGBT
物料参数
| 状态: | 已停产 |
| Compliance: | Pb A H P |
| Family: | - |
| V(BR)CES Typ (V): | 650 |
| IC Max (A): | 240 |
| VCE(sat) Typ (V): | 1.5 |
| VF Typ (V): | 1.3 |
| Eoff Typ (mJ): | 3.5 |
| Eon Typ (mJ): | 6.8 |
| Trr Typ (ns): | 123 |
| Irr Typ (A): | - |
| Gate Charge Typ (nC): | 162 |
| Short Circuit Withstand (µs): | 6 |
| EAS Typ (mJ): | - |
| PD Max (W): | 882 |
| Co-Packaged Diode: | Yes |
| Package Type: | TO-247-3 |
| MSL Type: | NA |
| MSL Temp (°C): | 0 |
| ON Target: | No |
| 参考价格: | Price N/A |