FCB11N60TM

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,11 A,380 mΩ,D2PAK

物料参数

状态:量产中
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:D2PAK
Type:High Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):600
RDS(on) Max @ VGS = 10 V (mΩ):380
VGS Max (V):±30
Vgs(th) Max (V):5
ID Max (A):11
PD Max (W):125
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):40
Ciss Typ (pF):1148
Qgd Typ @ VGS = 4.5 V (nC):21
Qrr Typ (nC):5700
Coss Typ (pF):671
Crss Typ (pF):63
Package Type:D2PAK-3 / TO-263-2
MSL Type:1
MSL Temp (°C):245
ON Target:Yes
参考价格:$1.6117
无库存
库存数量:0
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