FCD4N60TM

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,3.9 A,1.2 Ω,DPAK

物料参数

状态:量产中
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:DPAK
Type:High Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):600
RDS(on) Max @ VGS = 10 V (mΩ):1200
VGS Max (V):±30
Vgs(th) Max (V):5
ID Max (A):3.9
PD Max (W):50
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):12.8
Ciss Typ (pF):415
Qgd Typ @ VGS = 4.5 V (nC):7.1
Qrr Typ (nC):2070
Coss Typ (pF):210
Crss Typ (pF):19.5
Package Type:DPAK-3 / TO-252-3
MSL Type:1
MSL Temp (°C):260
ON Target:Yes
参考价格:$0.7962
无库存
库存数量:0
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