FDB029N06

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道,PowerTrench® MOSFET,60V,193A,3.1mΩ

物料参数

状态:已停产
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:D2PAK
Type:Low-Medium Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):60
RDS(on) Max @ VGS = 10 V (mΩ):3.1
Vgs (V):20
Vgs(th) Max (V):4.5
ID Max (A):193
PD Max (W):231
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):116
Ciss Typ (pF):7380
Qgd Typ @ VGS = 4.5 V (nC):35
Qrr Typ (nC):50
Coss Typ (pF):1095
Crss Typ (pF):415
Package Type:D2PAK-3 / TO-263-2
MSL Type:1
MSL Temp (°C):245
ON Target:No
参考价格:Price N/A
无库存
库存数量:0
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