FDB047N10

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道 PowerTrench® MOSFET 100V,164A,4.7mΩ

物料参数

状态:量产中
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:D2PAK
Type:Low-Medium Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):100
RDS(on) Max @ VGS = 10 V (mΩ):4.7
Vgs (V):±20
Vgs(th) Max (V):4.5
ID Max (A):164
PD Max (W):375
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):160
Ciss Typ (pF):11500
Qgd Typ @ VGS = 4.5 V (nC):36
Qrr Typ (nC):245
Coss Typ (pF):1120
Crss Typ (pF):455
Package Type:D2PAK-3 / TO-263-2
MSL Type:1
MSL Temp (°C):245
ON Target:Yes
参考价格:$1.9737