FDB070AN06A0

制造商: ONSEMI

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: N 沟道 Power Trench® MOSFET 60V,80A,7mΩ

物料参数

状态:Active
Compliance:Pb A H P
Channel Polarity:N-Channel
Silicon Family:PowerTrench® T1
Package Name:D2PAK
Type:Low-Medium Voltage
Gate Level:Standard
Wide SOA Mosfets:0
Configuration:Single
OPN in older Technology:0
V(BR)DSS Min (V):60
RDS(on) Max @ VGS = 10 V (mΩ):7
Vgs (V):20
Vgs(th) Max (V):4
ID Max (A):80
PD Max (W):175
RDS(on) Max @ VGS = 2.5 V (mΩ):-
RDS(on) Max @ VGS = 4.5 V (mΩ):-
Qg Typ @ VGS = 4.5 V (nC):-
Qg Typ @ VGS = 10 V (nC):51
Ciss Typ (pF):3000
Qgd Typ @ VGS = 4.5 V (nC):16
Qrr Typ (nC):35
Coss Typ (pF):510
Crss Typ (pF):230
Package Type:D2PAK-3 / TO-263-2
MSL Type:1
MSL Temp (°C):245
ON Target:Y
Reference Price:$1.6222