INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Configuration: SiC Rectifier Bridge
Dimensions(width): 109.9mm
Dimensions(length): 62.0mm
Housing: EasyBRIDGE 3
Voltage Class: 1200.0V
I[RMSM]: 60.0A
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I[(FSM)] max: 605.0A
I[RMSM]: 75.0A
Housing: EasyBRIDGE 1
Configuration: Diode Bridges with Brake Chopper and NTC
Voltage Class max: 1600.0V
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Configuration: SiC Diodes
Dimensions(width): 33.8mm
Dimensions(length): 62.8mm
Voltage Class max: 1200.0V
Housing: EasyBRIDGE 1
I[(FSM)] max: 150.0A
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I[(FSM)] max: 550.0A
I[RMSM]: 134.0A
Housing: EconoBRIDGE™
Configuration: Diode Bridges with Brake Chopper and NTC
Voltage Class max: 1600.0V
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Configuration: SiC Diodes
Dimensions(width): 33.8mm
Dimensions(length): 62.8mm
Voltage Class max: 1200.0V
Housing: EasyBRIDGE 1
I[(FSM)] max: 415.0A
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AIDK16S65C5
分类:数据:
简介: The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes
I[(FSM)] max: 63.0A
I[F] max: 16.0A
I[R]: 3.0µA
P[tot] max: 79.0W
Q[C]: 23.0nC
Qualification: Automotive
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AIDK08S65C5
分类:数据:
简介: The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes
Qualification: Automotive
I[F] max: 8.0A
V[F]: 1.5V
Q[C]: 13.0nC
I[(FSM)] max: 35.0A
I[R]: 1.0µA
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I[R] max: 26.0µA
Technology: Emitter Controlled Diode 4 Medium Power
V[DS] max: 1200.0V
V[F]: 1.25V
I[F] max: 150.0A
I[(FSM)] max: 300.0A
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I[R] max: 10.0µA
Technology: Emitter Controlled Diode 4 Medium Power
V[DS] max: 1200.0V
V[F]: 1.7V
I[F] max: 50.0A
I[(FSM)] max: 100.0A
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I[R] max: 18.0µA
Technology: Emitter Controlled Diode 4 Medium Power
V[DS] max: 1200.0V
V[F]: 1.7V
I[F] max: 100.0A
I[(FSM)] max: 200.0A
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