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INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

S27KS0641DPBHI020

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数据:

简介: 64MBit 1.8 V Industrial (85°C) HyperBus HYPERRAM Gen 1.0 in 24 FBGA

Family:  KS-1
Interface Frequency (SDR/DDR)(MHz):  - / 166
Lead Ball Finish:  N/A
Operating Temperature max:  85.0°C
Operating Voltage:  1.8V
Peak Reflow Temp:  260.0°C
库存数量:
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TCI

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数据:

简介: XENSIV™ TCI H2 sensor: Hydrogen sensor based on thermal conductivity principle

Green:  RoHS compliant
Green:  Halogen free
Supply Voltage:  3.3V
Lower Concentration Detection Limit max:  0.1%H2
Current consumption in active mode:  5.0mA
12C communication speed max:  1.0MByte/s
库存数量:
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ISZ157N08NM6

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数据:

简介: OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3

I[D ](@25°C) max:  37.0A
Operating Temperature max:  175.0°C
Package:  PQFN 3.3 x 3.3 Fused Lead
Polarity:  N
Q[G](typ @10V):  8.3nC
R[DS (on)](@10V) max:  15.7mΩ
库存数量:
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ISZ053N08NM6

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数据:

简介: OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3 x 3.3

I[D ](@25°C) max:  90.0A
I[Dpuls] max:  360.0A
Operating Temperature max:  175.0°C
P[tot] max:  100.0W
Package:  PQFN 3.3 x 3.3 Fused Lead
Polarity:  N
库存数量:
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IQFH68N06NM5

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数据:

简介: OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with ultra-low RDS(on)

Operating Temperature max:  175.0°C
Package:  PQFN 8x6
Polarity:  N
Q[G](typ @10V):  168.0nC
R[DS (on)](@10V) max:  0.68mΩ
V[DS] max:  60.0V
库存数量:
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IQFH99N06NM5

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数据:

简介: OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with very-low RDS(on)

Operating Temperature max:  175.0°C
Package:  PQFN 8x6
Polarity:  N
Q[G](typ @10V):  115.0nC
R[DS (on)](@10V) max:  0.99mΩ
V[DS] max:  60.0V
库存数量:
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IQFH86N06NM5

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数据:

简介: OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with very-low RDS(on)

Operating Temperature max:  175.0°C
Package:  PQFN 8x6
Polarity:  N
Q[G](typ @10V):  137.0nC
R[DS (on)](@10V) max:  0.86mΩ
V[DS] max:  60.0V
库存数量:
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IQFH61N06NM5

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数据:

简介: OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with benchmark RDS(on) in the industry

Operating Temperature max:  175.0°C
Package:  PQFN 8x6
Polarity:  N
Q[G](typ @10V):  190.0nC
R[DS (on)](@10V) max:  0.61mΩ
V[DS] max:  60.0V
库存数量:
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ISC014N08NM6

分类:
数据:

简介: OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8

I[D ](@25°C) max:  279.0A
Operating Temperature max:  175.0°C
Package:  SuperSO8 5x6
Polarity:  N
Q[G](typ @10V):  79.0nC
R[DS (on)](@10V) max:  1.45mΩ
库存数量:
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ISC151N08NM6

分类:
数据:

简介: OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8

I[D ](@25°C) max:  37.0A
Operating Temperature max:  175.0°C
Package:  SuperSO8 5x6 FL
Polarity:  N
Q[G](typ @10V):  8.3nC
R[DS (on)](@10V) max:  15.1mΩ
库存数量:
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