INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
GS66504B-TR
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管数据:
简介: CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability
VDS: NoneV
QG: 3.3nC
Mounting: SMT
IDpuls(@25°C): NoneA
ID (@25°C): NoneA
RDS (on)(typ): 100.0mΩ
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on): NonemΩ
RDS (on)(typ): 110.0mΩ
Generation: G5
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 55.0mΩ
Generation: G5
RDS (on): NonemΩ
IGO60R070D1
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管数据:
简介: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
Package: DSO-20-85
Polarity: N
QG: 5.8nC
VDS: NoneV
VGS(th): 1.2V
RDS (on)(typ): 55.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on)(typ): 55.0mΩ
Generation: G5
RDS (on): NonemΩ
GS-065-018-6-LR-TR
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管数据:
简介: CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability
ID (@25°C): NoneA
IDpuls(@25°C): NoneA
Mounting: SMT
QG: 4.2nC
RDS (on): NonemΩ
RDS (on)(typ): 62.0mΩ
VDS: NoneV
Generation: G4
IGLD60R070D1
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管数据:
简介: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
Package: LSON-8-1
Polarity: N
QG: 5.8nC
VDS: NoneV
VGS(th): 1.2V
RDS (on)(typ): 55.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3
Mounting: SMT
VDS: NoneV
RDS (on): NonemΩ
RDS (on)(typ): 35.0mΩ
Generation: G5
Mounting: SMT
VDS: NoneV
RDS (on): NonemΩ
RDS (on)(typ): 80.0mΩ
Generation: G5
IGLR60R190D1
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 其他场效应晶体管数据:
简介: 600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
Mounting: SMT
QG: 3.2nC
VDS: NoneV
RDS (on)(typ): 140.0mΩ
ID (@ TA=25°C): NoneA
IDpuls(@25°C): NoneA
Generation: ≤ G3