INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Architecture: QDR-II+, ODT
Bank Switching: N
Burst Length(Words): 2
Data Width: x 36
Interfaces: Parallel
Lead Ball Finish: Sn/Pb
| 库存数量: | 0 |
CYRS15B102Q-GGMB
分类:数据:
简介: Infineon offers the industry’s first radiation hardened, highly reliable, small footprint, 2 Mb non-volatile SPI Ferroelectric RAM (F-RAM) .
Frequency: 25.0MHz
Interfaces: SPI
Operating Voltage: NoneV
Qualification: Military
Peak Reflow Temp: 260.0°C
Organization (X x Y): 4Mb x 18
| 库存数量: | 0 |
5962R2020202VXC
分类:简介: Infineons QML-V Certified 16Mb FAST Asynchronous SRAM with ECC for Radiation-Hardened Memory Solutions
Qualification: Military
Density: 16384.0MBit
Interfaces: Parallel
Operating Voltage: NoneV
Operating Temperature: None°C
Organization (X x Y): 2M x8
| 库存数量: | 0 |
Bank Switching: N
Burst Length(Words): 2
Data Width: x 18
ECC: N
Family: QDR-II+
Frequency: 250.0MHz
| 库存数量: | 0 |
Architecture: QDR-II+, ODT
Bank Switching: N
Burst Length(Words): 4
Data Width: x 18
Family: QDR-II+, ODT
Frequency: 250.0MHz
| 库存数量: | 0 |
Architecture: QDR-II+
Bank Switching: N
ECC: N
Family: QDR-II+
Frequency: 250.0MHz
Lead Ball Finish: Sn/Pb
| 库存数量: | 0 |
Architecture: QDR-II+
Burst Length(Words): 4
Data Width: x 18
ECC: N
Family: QDR-II+
Frequency: 250.0MHz
| 库存数量: | 0 |
Architecture: QDR-II+, ODT
Burst Length(Words): 4
Data Width: x 36
ECC: N
Family: QDR-II+, ODT
Lead Ball Finish: Sn/Pb
| 库存数量: | 0 |
Architecture: QDR-II+
Bank Switching: N
Burst Length(Words): 4
ECC: N
Family: QDR-II+, ODT
Frequency: 450.0MHz
| 库存数量: | 0 |
Architecture: QDR-II+, ODT
Bank Switching: N
Burst Length(Words): 2
Frequency: 250.0MHz
Interfaces: Parallel
Lead Ball Finish: Sn/Pb
| 库存数量: | 0 |