ONSEMI
FCB110N65F
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，D2-PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 110
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 5
ID Max (A): 35
PD Max (W): 357
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 98
更多
Ciss Typ (pF): 3680
Qgd Typ @ VGS = 4.5 V (nC): 43
Qrr Typ (nC): 670
Coss Typ (pF): 110
Crss Typ (pF): 0.65
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $3.286
FCB11N60TM
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，11 A，380 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 380
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 11
PD Max (W): 125
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 40
更多
Ciss Typ (pF): 1148
Qgd Typ @ VGS = 4.5 V (nC): 21
Qrr Typ (nC): 5700
Coss Typ (pF): 671
Crss Typ (pF): 63
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.6117
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 125
VGS Max (V): 30
Vgs(th) Max (V): 4.5
ID Max (A): 24
PD Max (W): 181
RDS(on) Max @ VGS = 2.5 V (mΩ): ~NA~
RDS(on) Max @ VGS = 4.5 V (mΩ): ~NA~
Qg Typ @ VGS = 4.5 V (nC): ~NA~
Qg Typ @ VGS = 10 V (nC): 46
更多
Ciss Typ (pF): 1940
Qgd Typ @ VGS = 4.5 V (nC): ~NA~
Qrr Typ (nC): 5.7
Coss Typ (pF): 40
Crss Typ (pF): 5.5
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $2.3452
FCB199N65S3
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，14 A，199 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 199
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 14
PD Max (W): 98
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 30
更多
Ciss Typ (pF): 1225
Qgd Typ @ VGS = 4.5 V (nC): 13
Qrr Typ (nC): 3500
Coss Typ (pF): 30
Crss Typ (pF): -
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.7343
FCB20N60TM
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20 A，190 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): -
Vgs(th) Max (V): -
ID Max (A): 20
PD Max (W): 208
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 75
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 1100
Coss Typ (pF): 1280
Crss Typ (pF): 95
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: $2.6572
FCB20N60FTM
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET®，FRFET®，600 V，20 A，190 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 208
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 75
更多
Ciss Typ (pF): 2370
Qgd Typ @ VGS = 4.5 V (nC): 36
Qrr Typ (nC): 1100
Coss Typ (pF): 1280
Crss Typ (pF): 95
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: $2.6183
FCB20N60F-F085
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: N 沟道 MOSFET 600V，20A，190mΩ，
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 190
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 405
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 78
更多
Ciss Typ (pF): 2305
Qgd Typ @ VGS = 4.5 V (nC): 41.5
Qrr Typ (nC): 1285
Coss Typ (pF): 1310
Crss Typ (pF): 105
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
FCB20N60-F085
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 600 V、20 A、173 mΩ、D2PAKN 沟道 SuperFET™
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: NA
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 600
RDS(on) Max @ VGS = 10 V (mΩ): 198
VGS Max (V): ±30
Vgs(th) Max (V): 5
ID Max (A): 20
PD Max (W): 341
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 72
更多
Ciss Typ (pF): 2710
Qgd Typ @ VGS = 4.5 V (nC): 31
Qrr Typ (nC): 10000
Coss Typ (pF): 1350
Crss Typ (pF): 68
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
FCB260N65S3
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: 功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，12 A，260 mΩ，D2PAK
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 650
RDS(on) Max @ VGS = 10 V (mΩ): 260
VGS Max (V): ±30
Vgs(th) Max (V): 4.5
ID Max (A): 12
PD Max (W): 90
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 24
更多
Ciss Typ (pF): 1010
Qgd Typ @ VGS = 4.5 V (nC): 9.7
Qrr Typ (nC): 3400
Coss Typ (pF): 25
Crss Typ (pF): -
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $1.5689
FCB290N80
制造商: ONSEMI分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:
简介: N 沟道 SuperFET® II MOSFET
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: High Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 800
RDS(on) Max @ VGS = 10 V (mΩ): 290
VGS Max (V): DC: ±20, AC: ±30
Vgs(th) Max (V): 4.5
ID Max (A): 17
PD Max (W): 212
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 58
更多
Ciss Typ (pF): 2410
Qgd Typ @ VGS = 4.5 V (nC): 22
Qrr Typ (nC): 12
Coss Typ (pF): 75
Crss Typ (pF): 0.36
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: Yes
参考价格: $3.1539