ONSEMI
状态: Active
Compliance: Pb A H P
Input Level: LVCMOS
Output Level: LVDS
VS Typ (V): 2.5
fin Typ (MHz): 25
fout Typ (MHz): 125
tJitter(Cy-Cy) Typ (ps): 100
tJitter(Period) Typ (ps): 100
tJitter(Φ) Typ (ps): 0
tR & tF Typ (ps): 400
tR & tF Max (ps): 700
TA Min (°C): -40
TA Max (°C): 85
Package Type: WDFN-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: F
Reference Price: Price N/A
NB3N51032DTG
制造商: ONSEMI分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 频率合成器
数据:
简介: 时钟生成器,3.3 V,晶体 - 25 MHz,100 MHz,125 MHz 和 200 MHz,双 HCSL/LVDS
状态: Active
Compliance: Pb A H P
Input Level: Crystal
Output Level: LVDS
VS Typ (V): 3.3
fin Typ (MHz): 25
fout Typ (MHz): 25
tJitter(Cy-Cy) Typ (ps): 20
tJitter(Period) Typ (ps): 1.5
tJitter(Φ) Typ (ps): 0.4
tR & tF Typ (ps): -
tR & tF Max (ps): 700
TA Min (°C): -40
TA Max (°C): 85
Package Type: TSSOP-16
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: Price N/A
NB3N51034DTG
制造商: ONSEMI分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 频率合成器
数据:
简介: 四路 HCSL / LVDS 时钟产生器,3.3 V,晶振至 100 MHz / 200 MHz
状态: Active
Compliance: Pb A H P
Input Level: Crystal
Output Level: LVDS
VS Typ (V): 3.3
fin Typ (MHz): 25
fout Typ (MHz): 200
tJitter(Cy-Cy) Typ (ps): -
tJitter(Period) Typ (ps): -
tJitter(Φ) Typ (ps): 0.4
tR & tF Typ (ps): 340 / 400
tR & tF Max (ps): 700
TA Min (°C): -40
TA Max (°C): 85
Package Type: TSSOP-20
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: Price N/A
状态: 生命周期终止
Compliance: Pb A H P
VDD Typ (V): 3.3
fin Typ (MHz): 100
fout Typ (MHz): 100
Deviation Type: Analog
Features: Trimmer Support
TA Min (°C): -40
TA Max (°C): 85
Package Type: WDFN-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: Yes
参考价格: Price N/A
LE25S161XBTAG
制造商: ONSEMI分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:
简介: 串行闪存,16 Mb (2048K x 8)
状态: Lifetime
Compliance: Pb A H P
Density: 16 Mb
Organization: 2048 x 8
tACC Max (ns): 8
VCC Min (V): 1.65
VCC Max (V): 1.95
I(standby) Max (µA): 12
Iact Max (mA): 4.5
T Min (°C): -40
T Max (°C): 90
Package Type: WLCSP8 2.92x1.53x0.525
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $1.8266
N64S818HAS21I
制造商: ONSEMI分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)
数据:
简介: 串行 SRAM 内存,64-kb,1.8 V
状态: Lifetime
Compliance: Pb A H P
Type: Serial
Density: 64 kb
Organization (bits): 8k x 8
fcycle Max (MHz): 16
VCC Min (V): 1.7
VCC Max (V): 1.95
Istandby Typ (µA): 1
Package Type: SOIC-8
MSL Type: 3
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.8
状态: Obsolete
Compliance: Pb A H P
Type: Serial
Density: 2 kb
Organization: 256 x 8
Data Transmission Standard: I2C
fcycle Max (kHz): 400
tACC Max ns: 900
VCC Min (V): 2.7
VCC Max (V): 5.5
Vio Ref (V): -
Istandby Max (µA): 60
Iact Max (mA): 3
T Min (°C): -40
T Max (°C): 85
Endurance (Write cycles): -
Specific Features: -
Package Type: SOIC-8
MSL Type: 1
MSL Temp (°C): 260
更多
ON Target: N
Reference Price: Price N/A
状态: Obsolete
Compliance: Pb A H P
Type: Serial
Density: 2 kb
Organization: 256 x 8
Data Transmission Standard: I2C
fcycle Max (kHz): 400
tACC Max ns: 900
VCC Min (V): 2.7
VCC Max (V): 5.5
Vio Ref (V): -
Istandby Max (µA): 60
Iact Max (mA): 3
T Min (°C): -40
T Max (°C): 85
Endurance (Write cycles): -
Specific Features: -
Package Type: SOIC-8
MSL Type: 1
MSL Temp (°C): 260
更多
ON Target: N
Reference Price: Price N/A
状态: Obsolete
Compliance: Pb A H P
Type: Serial
Density: 2 kb
Organization: 256 x 8
Data Transmission Standard: I2C
fcycle Max (kHz): 400
tACC Max ns: 900
VCC Min (V): 2.7
VCC Max (V): 5.5
Vio Ref (V): -
Istandby Max (µA): 60
Iact Max (mA): 3
T Min (°C): -40
T Max (°C): 85
Endurance (Write cycles): -
Specific Features: -
Package Type: TSSOP-8
MSL Type: 1
MSL Temp (°C): 260
更多
ON Target: N
Reference Price: Price N/A
状态: Obsolete
Compliance: Pb A H P
Type: Serial
Density: 2 kb
Organization: 256 x 8
Data Transmission Standard: I2C
fcycle Max (kHz): 400
tACC Max ns: 900
VCC Min (V): 2.7
VCC Max (V): 5.5
Vio Ref (V): -
Istandby Max (µA): 60
Iact Max (mA): 3
T Min (°C): -40
T Max (°C): 85
Endurance (Write cycles): -
Specific Features: -
Package Type: TSSOP-8
MSL Type: 1
MSL Temp (°C): 260
更多
ON Target: N
Reference Price: Price N/A