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ONSEMI

FCH041N60F-F085

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 600 V、47 A、36 mΩ、TO-247N 沟道 SuperFET™

状态: Lifetime Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 600 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): ±20 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 267
Ciss Typ (pF): 10900 Qgd Typ @ VGS = 4.5 V (nC): 106 Qrr Typ (nC): 1900 Coss Typ (pF): 360 Crss Typ (pF): 4.4 Package Type: TO-247-3 MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: $11.5536

FCH041N65EF-F155

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，71 mΩ，TO-247

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 650 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 229
Ciss Typ (pF): 9446 Qgd Typ @ VGS = 4.5 V (nC): 90 Qrr Typ (nC): 1500 Coss Typ (pF): 366 Crss Typ (pF): 35 Package Type: TO-247-3 MSL Type: NA MSL Temp (°C): 0 ON Target: Yes 参考价格: $8.4739

FCH041N65EFLN4

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 窄体 4L

状态: Obsolete Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247-4 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 650 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 229
Ciss Typ (pF): - Qgd Typ @ VGS = 4.5 V (nC): - Qrr Typ (nC): - Coss Typ (pF): - Crss Typ (pF): - Package Type: TO-247 4-LEAD, THIN LEADS MSL Type: NA MSL Temp (°C): 0 ON Target: N Reference Price: Price N/A

FCH041N65EFL4

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，76 A，41 mΩ，TO-247 4L

状态: Active Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: TO-247 Type: High Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 650 RDS(on) Max @ VGS = 10 V (mΩ): 41 VGS Max (V): DC: ±20, AC: ±30 Vgs(th) Max (V): 5 ID Max (A): 76 PD Max (W): 595 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 229
Ciss Typ (pF): 9446 Qgd Typ @ VGS = 4.5 V (nC): 90 Qrr Typ (nC): 1500 Coss Typ (pF): 366 Crss Typ (pF): 35 Package Type: TO-247-4 MSL Type: NA MSL Temp (°C): 0 ON Target: Y Reference Price: $8.0892

ATP113-TL-H

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P 沟道，功率 MOSFET，-60V，-35A，29.5mΩ

状态: 生命周期终止 Compliance: Pb A H P Channel Polarity: P-Channel Silicon Family: PowerTrench® T1 Package Name: DPAK Type: Low-Medium Voltage Gate Level: Logic Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): -60 RDS(on) Max @ VGS = 10 V (mΩ): 29.5 Vgs (V): 20 Vgs(th) Max (V): -2.6 ID Max (A): -35 PD Max (W): 50 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): 38 Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 55
Ciss Typ (pF): 2400 Qgd Typ @ VGS = 4.5 V (nC): 12 Qrr Typ (nC): - Coss Typ (pF): 250 Crss Typ (pF): 195 Package Type: DPAK (Single Gauge) / ATPAK MSL Type: 1 MSL Temp (°C): 260 ON Target: No 参考价格: $0.7293

FDB0300N1007L

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道，PowerTrench® MOSFET，100V，200A，3mΩ

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK7 Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 100 RDS(on) Max @ VGS = 10 V (mΩ): 3 Vgs (V): ±20 Vgs(th) Max (V): 4 ID Max (A): 200 PD Max (W): 250 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 44
Ciss Typ (pF): 5925 Qgd Typ @ VGS = 4.5 V (nC): 16 Qrr Typ (nC): 128 Coss Typ (pF): 1220 Crss Typ (pF): 42 Package Type: D2PAK-7 / TO-263-7 MSL Type: 1 MSL Temp (°C): 245 ON Target: N Reference Price: $2.6422

FDB031N08

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道 PowerTrench® MOSFET 75V，235A，3.1mΩ

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 75 RDS(on) Max @ VGS = 10 V (mΩ): 3.1 Vgs (V): ±20 Vgs(th) Max (V): 4.5 ID Max (A): 235 PD Max (W): 375 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 169
Ciss Typ (pF): 11400 Qgd Typ @ VGS = 4.5 V (nC): 47 Qrr Typ (nC): 77 Coss Typ (pF): 1360 Crss Typ (pF): 595 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: N Reference Price: Price N/A

FDB045AN08A0

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道 PowerTrench® MOSFET 75V，80 A，4.5 mΩ

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 75 RDS(on) Max @ VGS = 10 V (mΩ): 4.5 Vgs (V): ±20 Vgs(th) Max (V): 4 ID Max (A): 80 PD Max (W): 310 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 92
Ciss Typ (pF): 6600 Qgd Typ @ VGS = 4.5 V (nC): 21 Qrr Typ (nC): 54 Coss Typ (pF): 1000 Crss Typ (pF): 240 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: Yes 参考价格: $1.954

FDB047N10

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道 PowerTrench® MOSFET 100V，164A，4.7mΩ

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 100 RDS(on) Max @ VGS = 10 V (mΩ): 4.7 Vgs (V): ±20 Vgs(th) Max (V): 4.5 ID Max (A): 164 PD Max (W): 375 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 160
Ciss Typ (pF): 11500 Qgd Typ @ VGS = 4.5 V (nC): 36 Qrr Typ (nC): 245 Coss Typ (pF): 1120 Crss Typ (pF): 455 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: Yes 参考价格: $1.9737

FDB050AN06A0

制造商: ONSEMI
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N 沟道 Power Trench® MOSFET 60V，80A，5mΩ

状态: 量产中 Compliance: Pb A H P Channel Polarity: N-Channel Silicon Family: PowerTrench® T1 Package Name: D2PAK Type: Low-Medium Voltage Gate Level: Standard Wide SOA Mosfets: 0 Configuration: Single OPN in older Technology: 0 V(BR)DSS Min (V): 60 RDS(on) Max @ VGS = 10 V (mΩ): 5 Vgs (V): 20 Vgs(th) Max (V): 4 ID Max (A): 80 PD Max (W): 245 RDS(on) Max @ VGS = 2.5 V (mΩ): - RDS(on) Max @ VGS = 4.5 V (mΩ): - Qg Typ @ VGS = 4.5 V (nC): - Qg Typ @ VGS = 10 V (nC): 61
Ciss Typ (pF): 3900 Qgd Typ @ VGS = 4.5 V (nC): 15 Qrr Typ (nC): 25 Coss Typ (pF): 750 Crss Typ (pF): 270 Package Type: D2PAK-3 / TO-263-2 MSL Type: 1 MSL Temp (°C): 245 ON Target: Yes 参考价格: $1.1856