TEXAS INSTRUMENTS
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晶体管类型: 8 NPN 达林顿
电流 - 集电极 (Ic)（最大值）: 500mA
电压 - 集射极击穿（最大值）: 50V
不同 Ib、Ic 时 Vce 饱和压降（最大值）: 1.6V @ 500µA，350mA
电流 - 集电极截止（最大值）: 50µA
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）: -
功率 - 最大值: -
频率 - 跃迁: -
工作温度: -40°C ~ 125°C（TJ）
等级: -
资质: -
安装类型: 表面贴装型
封装/外壳: 18-SOIC（0.295，7.50mm 宽）
供应商器件封装: 18-SOIC
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 1
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 0.15
Vn at 1 kHz (typ) (nV√Hz): 33
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2
Features: Cost Optimized, EMI Hardened, MUX Friendly
CMRR (typ) (dB): 110
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 2
Output swing headroom (to negative supply) (typ) (V): 0.04
Output swing headroom (to positive supply) (typ) (V): -0.04
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Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 1
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 0.15
Vn at 1 kHz (typ) (nV√Hz): 33
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2
Features: Cost Optimized, EMI Hardened, MUX Friendly
CMRR (typ) (dB): 110
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 2
Output swing headroom (to negative supply) (typ) (V): 0.04
Output swing headroom (to positive supply) (typ) (V): -0.04