Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 1
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 0.15
Vn at 1 kHz (typ) (nV√Hz): 33
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2
Features: Cost Optimized, EMI Hardened, MUX Friendly
CMRR (typ) (dB): 110
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 2
Output swing headroom (to negative supply) (typ) (V): 0.04
Output swing headroom (to positive supply) (typ) (V): -0.04
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Rail-to-rail: In to V-, Out
GBW (typ) (MHz): 1
Slew rate (typ) (V/µs): 3
Vos (offset voltage at 25°C) (max) (mV): 2.5
Iq per channel (typ) (mA): 0.15
Vn at 1 kHz (typ) (nV√Hz): 33
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 2
Features: Cost Optimized, EMI Hardened, MUX Friendly
CMRR (typ) (dB): 110
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 2
Output swing headroom (to negative supply) (typ) (V): 0.04
Output swing headroom (to positive supply) (typ) (V): -0.04
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7
Rail-to-rail: In, Out
GBW (typ) (MHz): 20
Slew rate (typ) (V/µs): 30
Vos (offset voltage at 25°C) (max) (mV): 0.8
Iq per channel (typ) (mA): 1.6
Vn at 1 kHz (typ) (nV√Hz): 8
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.4
Features: Zero Crossover
Input bias current (max) (pA): 5
CMRR (typ) (dB): 110
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
更多
Output swing headroom (to positive supply) (typ) (V): -0.01
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7
Rail-to-rail: In, Out
GBW (typ) (MHz): 20
Slew rate (typ) (V/µs): 30
Vos (offset voltage at 25°C) (max) (mV): 0.8
Iq per channel (typ) (mA): 1.6
Vn at 1 kHz (typ) (nV√Hz): 8
Rating: Catalog
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.4
Features: Zero Crossover
Input bias current (max) (pA): 5
CMRR (typ) (dB): 110
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.01
Output swing headroom (to positive supply) (typ) (V): -0.01
OPA596
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 采用小型封装的 85V 高速度 (100V/μs) 功率 (400µA) 比精密运算放大器
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 85
Iout (typ) (A): 0.03
GBW (typ) (MHz): 3.75
Slew rate (typ) (V/µs): 45
Vos (offset voltage at 25°C) (max) (mV): 100
Offset drift (typ) (V/°C): 0.000001
Iq per channel (typ) (mA): 0.425
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 5
CMRR (typ) (dB): 140
Rail-to-rail: In-Out
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 85
Iout (typ) (A): 0.03
GBW (typ) (MHz): 3.75
Slew rate (typ) (V/µs): 45
更多
Vos (offset voltage at 25°C) (max) (mV): 100
Offset drift (typ) (V/°C): 0.000001
Iq per channel (typ) (mA): 0.425
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 5
CMRR (typ) (dB): 140
Rail-to-rail: In-Out
TLV9044-Q1
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: 具有低静态电流 (10μA) 的汽车级、四通道、5.5V、350kHz、超低 1.2V 运算放大器
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.2
Rail-to-rail: In, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.2
Vos (offset voltage at 25°C) (max) (mV): 2.25
Iq per channel (typ) (mA): 0.01
Vn at 1 kHz (typ) (nV√Hz): 66
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.8
Features: Cost Optimized, EMI Hardened, Low Power, Shutdown, Small Size
Input bias current (max) (pA): 12
CMRR (typ) (dB): 89
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.2
更多
Output swing headroom (to positive supply) (typ) (V): 0.2
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.2
Rail-to-rail: In, Out
GBW (typ) (MHz): 0.35
Slew rate (typ) (V/µs): 0.2
Vos (offset voltage at 25°C) (max) (mV): 2.25
Iq per channel (typ) (mA): 0.01
Vn at 1 kHz (typ) (nV√Hz): 66
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.8
Features: Cost Optimized, EMI Hardened, Low Power, Shutdown, Small Size
Input bias current (max) (pA): 12
CMRR (typ) (dB): 89
Iout (typ) (A): 0.04
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): 0
Input common mode headroom (to positive supply) (typ) (V): 0
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): 0.2
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7
Vos (offset voltage at 25°C) (max) (mV): 0.045
GBW (typ) (MHz): 1
Features: e-Trim™
Slew rate (typ) (V/µs): 1
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 1
Iq per channel (typ) (mA): 0.0235
Vn at 1 kHz (typ) (nV√Hz): 60
CMRR (typ) (dB): 121
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 0.8
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.003
更多
Output swing headroom (to positive supply) (typ) (V): -0.003
THD + N at 1 kHz (typ) (%): 0.002
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7
Vos (offset voltage at 25°C) (max) (mV): 0.045
GBW (typ) (MHz): 1
Features: e-Trim™
Slew rate (typ) (V/µs): 1
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 1
Iq per channel (typ) (mA): 0.0235
Vn at 1 kHz (typ) (nV√Hz): 60
CMRR (typ) (dB): 121
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 0.8
Iout (typ) (A): 0.06
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.003
Output swing headroom (to positive supply) (typ) (V): -0.003
THD + N at 1 kHz (typ) (%): 0.002
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Rail-to-rail: In, Out
GBW (typ) (MHz): 5
Slew rate (typ) (V/µs): 15
Vos (offset voltage at 25°C) (max) (mV): 1.6
Iq per channel (typ) (mA): 0.33
Vn at 1 kHz (typ) (nV√Hz): 20
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Cost Optimized, EMI Hardened, Shutdown, Small Size
CMRR (typ) (dB): 96
Iout (typ) (A): 0.05
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -0.03
更多
Number of channels: 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Rail-to-rail: In, Out
GBW (typ) (MHz): 5
Slew rate (typ) (V/µs): 15
Vos (offset voltage at 25°C) (max) (mV): 1.6
Iq per channel (typ) (mA): 0.33
Vn at 1 kHz (typ) (nV√Hz): 20
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Cost Optimized, EMI Hardened, Shutdown, Small Size
CMRR (typ) (dB): 96
Iout (typ) (A): 0.05
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -0.03
TLV9051-Q1
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: Automotive, single, 5.5V, 5MHz, 15V/μs slew rate, RRIO operational amplifier
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Rail-to-rail: In, Out
GBW (typ) (MHz): 5
Slew rate (typ) (V/µs): 15
Vos (offset voltage at 25°C) (max) (mV): 1.6
Iq per channel (typ) (mA): 0.33
Vn at 1 kHz (typ) (nV√Hz): 20
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Cost Optimized, EMI Hardened, Shutdown, Small Size
CMRR (typ) (dB): 96
Iout (typ) (A): 0.05
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -0.03
更多
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8
Rail-to-rail: In, Out
GBW (typ) (MHz): 5
Slew rate (typ) (V/µs): 15
Vos (offset voltage at 25°C) (max) (mV): 1.6
Iq per channel (typ) (mA): 0.33
Vn at 1 kHz (typ) (nV√Hz): 20
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.5
Features: Cost Optimized, EMI Hardened, Shutdown, Small Size
CMRR (typ) (dB): 96
Iout (typ) (A): 0.05
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): 0.1
Output swing headroom (to negative supply) (typ) (V): 0.03
Output swing headroom (to positive supply) (typ) (V): -0.03
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 2.5
Features: EMI Hardened
Slew rate (typ) (V/µs): 7.5
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.1
Iq per channel (typ) (mA): 0.275
Vn at 1 kHz (typ) (nV√Hz): 15
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 85
Input bias current (max) (pA): 0.01
Iout (typ) (A): 0.1
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -3
Output swing headroom (to negative supply) (typ) (V): 0.05
更多
Output swing headroom (to positive supply) (typ) (V): 0.05
THD + N at 1 kHz (typ) (%): 0.0012
Number of channels: 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 2.5
Features: EMI Hardened
Slew rate (typ) (V/µs): 7.5
Rail-to-rail: In, Out
Offset drift (typ) (µV/°C): 0.1
Iq per channel (typ) (mA): 0.275
Vn at 1 kHz (typ) (nV√Hz): 15
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 85
Input bias current (max) (pA): 0.01
Iout (typ) (A): 0.1
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.1
Input common mode headroom (to positive supply) (typ) (V): -3
Output swing headroom (to negative supply) (typ) (V): 0.05
Output swing headroom (to positive supply) (typ) (V): 0.05
THD + N at 1 kHz (typ) (%): 0.0012
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Rail-to-rail: In, Out
GBW (typ) (MHz): 1.1
Slew rate (typ) (V/µs): 4.5
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 0.12
Vn at 1 kHz (typ) (nV√Hz): 30
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.6
Features: EMI Hardened, High Cload Drive, MUX Friendly, Small Size
CMRR (typ) (dB): 115
Iout (typ) (A): 0.08
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 0.2
Output swing headroom (to negative supply) (typ) (V): 0.025
Output swing headroom (to positive supply) (typ) (V): -0.025
更多
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7
Rail-to-rail: In, Out
GBW (typ) (MHz): 1.1
Slew rate (typ) (V/µs): 4.5
Vos (offset voltage at 25°C) (max) (mV): 1.5
Iq per channel (typ) (mA): 0.12
Vn at 1 kHz (typ) (nV√Hz): 30
Rating: Automotive
Operating temperature range (°C): -40 to 125
Offset drift (typ) (µV/°C): 0.6
Features: EMI Hardened, High Cload Drive, MUX Friendly, Small Size
CMRR (typ) (dB): 115
Iout (typ) (A): 0.08
Architecture: CMOS
Input common mode headroom (to negative supply) (typ) (V): -0.2
Input common mode headroom (to positive supply) (typ) (V): 0.2
Output swing headroom (to negative supply) (typ) (V): 0.025
Output swing headroom (to positive supply) (typ) (V): -0.025
OPA4206
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 放大器 / 运算放大器
描述: Input-overvoltage-protected, low-power, low-noise four-channel op amp with super-beta inputs
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 3.6
Features: EMI Hardened, Overvoltage protection, Super Beta, e-Trim™
Slew rate (typ) (V/µs): 3.2
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.04
Iq per channel (typ) (mA): 0.22
Vn at 1 kHz (typ) (nV√Hz): 8
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 500
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1.4
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): 0.2
更多
THD + N at 1 kHz (typ) (%): 0.0004
Number of channels: 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5
Vos (offset voltage at 25°C) (max) (mV): 0.025
GBW (typ) (MHz): 3.6
Features: EMI Hardened, Overvoltage protection, Super Beta, e-Trim™
Slew rate (typ) (V/µs): 3.2
Rail-to-rail: Out
Offset drift (typ) (µV/°C): 0.04
Iq per channel (typ) (mA): 0.22
Vn at 1 kHz (typ) (nV√Hz): 8
CMRR (typ) (dB): 140
Rating: Catalog
Operating temperature range (°C): -40 to 125
Input bias current (max) (pA): 500
Architecture: Bipolar
Input common mode headroom (to negative supply) (typ) (V): 1
Input common mode headroom (to positive supply) (typ) (V): -1.4
Output swing headroom (to negative supply) (typ) (V): 0.2
Output swing headroom (to positive supply) (typ) (V): 0.2
THD + N at 1 kHz (typ) (%): 0.0004