CSD18510Q5B


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、0.96mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 0.96 Rds(on) at VGS=4.5 V (max) (mΩ): 1.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 118 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 300 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 0.96
Rds(on) at VGS=4.5 V (max) (mΩ): 1.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 118 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 300 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18510KCS


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 TO-220 封装的单路、1.7mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.7 Rds(on) at VGS=4.5 V (max) (mΩ): 2.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 119 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 274 ID - package limited (A): 200 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.7
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 119 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 274 ID - package limited (A): 200 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175

CSD18512Q5B


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、1.6mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.6 Rds(on) at VGS=4.5 V (max) (mΩ): 2.3 VGSTH typ (typ) (V): 1.6 QG (typ) (nC): 75 QGD (typ) (nC): 13.3 QGS (typ) (nC): 15.1 ID - silicon limited at TC=25°C (A): 211 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.6
Rds(on) at VGS=4.5 V (max) (mΩ): 2.3 VGSTH typ (typ) (V): 1.6 QG (typ) (nC): 75 QGD (typ) (nC): 13.3 QGS (typ) (nC): 15.1 ID - silicon limited at TC=25°C (A): 211 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18543Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、9.9mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 9.9 Rds(on) at VGS=4.5 V (max) (mΩ): 15.6 VGSTH typ (typ) (V): 2 QG (typ) (nC): 11.1 QGD (typ) (nC): 1.7 QGS (typ) (nC): 3.1 ID - silicon limited at TC=25°C (A): 60 ID - package limited (A): 35 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 9.9
Rds(on) at VGS=4.5 V (max) (mΩ): 15.6 VGSTH typ (typ) (V): 2 QG (typ) (nC): 11.1 QGD (typ) (nC): 1.7 QGS (typ) (nC): 3.1 ID - silicon limited at TC=25°C (A): 60 ID - package limited (A): 35 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18510KTT


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 D2PAK 封装的单路、1.7mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.7 Rds(on) at VGS=4.5 V (max) (mΩ): 2.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 119 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 274 ID - package limited (A): 200 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 1.7
Rds(on) at VGS=4.5 V (max) (mΩ): 2.6 VGSTH typ (typ) (V): 1.7 QG (typ) (nC): 119 QGD (typ) (nC): 21 QGS (typ) (nC): 28 ID - silicon limited at TC=25°C (A): 274 ID - package limited (A): 200 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 175

CSD18511Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、2.3mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 2.3 Rds(on) at VGS=4.5 V (max) (mΩ): 3.5 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 63 QGD (typ) (nC): 11.2 QGS (typ) (nC): 13.2 ID - silicon limited at TC=25°C (A): 159 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 2.3
Rds(on) at VGS=4.5 V (max) (mΩ): 3.5 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 63 QGD (typ) (nC): 11.2 QGS (typ) (nC): 13.2 ID - silicon limited at TC=25°C (A): 159 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18513Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、3.4mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.4 Rds(on) at VGS=4.5 V (max) (mΩ): 5.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 45 QGD (typ) (nC): 8.8 QGS (typ) (nC): 9.1 ID - silicon limited at TC=25°C (A): 124 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.4
Rds(on) at VGS=4.5 V (max) (mΩ): 5.3 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 45 QGD (typ) (nC): 8.8 QGS (typ) (nC): 9.1 ID - silicon limited at TC=25°C (A): 124 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18514Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、4.9mΩ、40V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.9 Rds(on) at VGS=4.5 V (max) (mΩ): 7.9 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 29 QGD (typ) (nC): 5 QGS (typ) (nC): 6 ID - silicon limited at TC=25°C (A): 89 ID - package limited (A): 50 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 40 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.9
Rds(on) at VGS=4.5 V (max) (mΩ): 7.9 VGSTH typ (typ) (V): 1.8 QG (typ) (nC): 29 QGD (typ) (nC): 5 QGS (typ) (nC): 6 ID - silicon limited at TC=25°C (A): 89 ID - package limited (A): 50 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD13380F3


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 12 VGS (V): 8 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 76 VGSTH typ (typ) (V): 0.85 QG (typ) (nC): 0.91 QGD (typ) (nC): 0.15 QGS (typ) (nC): 0.19 ID - silicon limited at TC=25°C (A): 3.6 ID - package limited (A): 3.6 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 12 VGS (V): 8 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 76 VGSTH typ (typ) (V): 0.85
QG (typ) (nC): 0.91 QGD (typ) (nC): 0.15 QGS (typ) (nC): 0.19 ID - silicon limited at TC=25°C (A): 3.6 ID - package limited (A): 3.6 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD13385F5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、19mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 12 VGS (V): 8 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 19 VGSTH typ (typ) (V): 0.8 QG (typ) (nC): 3.9 QGD (typ) (nC): 0.39 QGS (typ) (nC): 0.74 ID - silicon limited at TC=25°C (A): 7.1 ID - package limited (A): 7.1 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 12 VGS (V): 8 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 19 VGSTH typ (typ) (V): 0.8
QG (typ) (nC): 3.9 QGD (typ) (nC): 0.39 QGS (typ) (nC): 0.74 ID - silicon limited at TC=25°C (A): 7.1 ID - package limited (A): 7.1 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150