CSD17585F5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、33mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 27 Rds(on) at VGS=4.5 V (max) (mΩ): 33 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 1.9 QGD (typ) (nC): 0.39 QGS (typ) (nC): 0.53 ID - silicon limited at TC=25°C (A): 5.9 ID - package limited (A): 5.9 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 27
Rds(on) at VGS=4.5 V (max) (mΩ): 33 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 1.9 QGD (typ) (nC): 0.39 QGS (typ) (nC): 0.53 ID - silicon limited at TC=25°C (A): 5.9 ID - package limited (A): 5.9 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17581Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、4.7mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.8 Rds(on) at VGS=4.5 V (max) (mΩ): 4.7 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 20 QGD (typ) (nC): 4 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 101 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.8
Rds(on) at VGS=4.5 V (max) (mΩ): 4.7 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 20 QGD (typ) (nC): 4 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 101 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17581Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、4.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.4 Rds(on) at VGS=4.5 V (max) (mΩ): 4.2 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 20 QGD (typ) (nC): 4 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 123 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 3.4
Rds(on) at VGS=4.5 V (max) (mΩ): 4.2 VGSTH typ (typ) (V): 1.3 QG (typ) (nC): 20 QGD (typ) (nC): 4 QGS (typ) (nC): 6.9 ID - silicon limited at TC=25°C (A): 123 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD23285F5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、35mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 35 Rds(on) at VGS=2.5 V (max) (mΩ): 47 VGSTH typ (typ) (V): -0.65 QG (typ) (nC): 3.2 QGD (typ) (nC): 0.48 QGS (typ) (nC): 0.66 ID - silicon limited at TC=25°C (A): 3.3 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 35 Rds(on) at VGS=2.5 V (max) (mΩ): 47
VGSTH typ (typ) (V): -0.65 QG (typ) (nC): 3.2 QGD (typ) (nC): 0.48 QGS (typ) (nC): 0.66 ID - silicon limited at TC=25°C (A): 3.3 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD25485F5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.8mm x 1.5mm LGA 封装、具有栅极 ESD 保护的单路、42mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -20 VGS (V): -12 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 42 Rds(on) at VGS=2.5 V (max) (mΩ): 70 VGSTH typ (typ) (V): -0.95 QG (typ) (nC): 2.7 QGD (typ) (nC): 0.56 QGS (typ) (nC): 0.67 ID - silicon limited at TC=25°C (A): 3.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -20 VGS (V): -12 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 42 Rds(on) at VGS=2.5 V (max) (mΩ): 70
VGSTH typ (typ) (V): -0.95 QG (typ) (nC): 2.7 QGD (typ) (nC): 0.56 QGS (typ) (nC): 0.67 ID - silicon limited at TC=25°C (A): 3.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD19538Q2


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 2mm x 2mm SON 封装的单路、59mΩ、100V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 100 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 59 VGSTH typ (typ) (V): 3.2 QG (typ) (nC): 4.3 QGD (typ) (nC): 0.8 QGS (typ) (nC): 1.6 ID - silicon limited at TC=25°C (A): 13.1 ID - package limited (A): 14.4 Logic level: No Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 100 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 59 VGSTH typ (typ) (V): 3.2
QG (typ) (nC): 4.3 QGD (typ) (nC): 0.8 QGS (typ) (nC): 1.6 ID - silicon limited at TC=25°C (A): 13.1 ID - package limited (A): 14.4 Logic level: No Rating: Catalog Operating temperature range (°C): -55 to 150

CSD19538Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、61mΩ、100V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 100 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 61 VGSTH typ (typ) (V): 3.2 QG (typ) (nC): 4.3 QGD (typ) (nC): 0.8 QGS (typ) (nC): 1.6 ID - silicon limited at TC=25°C (A): 13.7 ID - package limited (A): 15 Logic level: No Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 100 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 61 VGSTH typ (typ) (V): 3.2
QG (typ) (nC): 4.3 QGD (typ) (nC): 0.8 QGS (typ) (nC): 1.6 ID - silicon limited at TC=25°C (A): 13.7 ID - package limited (A): 15 Logic level: No Rating: Catalog Operating temperature range (°C): -55 to 150

CSD18541F5


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1.5mm x 0.8mm LGA 封装、具有栅极 ESD 保护的单路、65mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 65 Rds(on) at VGS=4.5 V (max) (mΩ): 75 VGSTH typ (typ) (V): 1.75 QG (typ) (nC): 11 QGD (typ) (nC): 1.6 QGS (typ) (nC): 1.5 ID - silicon limited at TC=25°C (A): 2.2 ID - package limited (A): 2.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 60 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 65
Rds(on) at VGS=4.5 V (max) (mΩ): 75 VGSTH typ (typ) (V): 1.75 QG (typ) (nC): 11 QGD (typ) (nC): 1.6 QGS (typ) (nC): 1.5 ID - silicon limited at TC=25°C (A): 2.2 ID - package limited (A): 2.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD15380F3


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、1460mΩ、20V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 20 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 1460 VGSTH typ (typ) (V): 1.1 QG (typ) (nC): 0.216 QGD (typ) (nC): 0.027 QGS (typ) (nC): 0.077 ID - silicon limited at TC=25°C (A): 0.5 ID - package limited (A): 0.5 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 20 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 1460 VGSTH typ (typ) (V): 1.1
QG (typ) (nC): 0.216 QGD (typ) (nC): 0.027 QGS (typ) (nC): 0.077 ID - silicon limited at TC=25°C (A): 0.5 ID - package limited (A): 0.5 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD23280F3


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、116mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 116 Rds(on) at VGS=2.5 V (max) (mΩ): 165 VGSTH typ (typ) (V): -0.65 QG (typ) (nC): 0.95 QGD (typ) (nC): 0.068 QGS (typ) (nC): 0.3 ID - silicon limited at TC=25°C (A): 1.8 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 116 Rds(on) at VGS=2.5 V (max) (mΩ): 165
VGSTH typ (typ) (V): -0.65 QG (typ) (nC): 0.95 QGD (typ) (nC): 0.068 QGS (typ) (nC): 0.3 ID - silicon limited at TC=25°C (A): 1.8 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150