CSD13383F4


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、44mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 12 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 44 VGSTH typ (typ) (V): 1 QG (typ) (nC): 2 QGD (typ) (nC): 0.6 QGS (typ) (nC): 0.4 ID - silicon limited at TC=25°C (A): 2.9 ID - package limited (A): 2.9 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 12 VGS (V): 10 Type: N-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 44 VGSTH typ (typ) (V): 1
QG (typ) (nC): 2 QGD (typ) (nC): 0.6 QGS (typ) (nC): 0.4 ID - silicon limited at TC=25°C (A): 2.9 ID - package limited (A): 2.9 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD23203W


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的单路、19.4mΩ、-8V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -8 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 19.4 Rds(on) at VGS=2.5 V (max) (mΩ): 26.5 VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 4.9 QGD (typ) (nC): 0.6 QGS (typ) (nC): 1.3 ID - silicon limited at TC=25°C (A): 3 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -8 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 19.4 Rds(on) at VGS=2.5 V (max) (mΩ): 26.5
VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 4.9 QGD (typ) (nC): 0.6 QGS (typ) (nC): 1.3 ID - silicon limited at TC=25°C (A): 3 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD83325L


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 LGA 封装、具有栅极 ESD 保护的双路、5.9mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 12 VGS (V): 10 Type: N-channel Configuration: Dual Common Drain Rds(on) at VGS=4.5 V (max) (mΩ): 5.9 VGSTH typ (typ) (V): 0.95 QG (typ) (nC): 8.4 QGD (typ) (nC): 1.9 QGS (typ) (nC): 2.2 ID - silicon limited at TC=25°C (A): 8 ID - package limited (A): 8 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 12 VGS (V): 10 Type: N-channel Configuration: Dual Common Drain Rds(on) at VGS=4.5 V (max) (mΩ): 5.9 VGSTH typ (typ) (V): 0.95
QG (typ) (nC): 8.4 QGD (typ) (nC): 1.9 QGS (typ) (nC): 2.2 ID - silicon limited at TC=25°C (A): 8 ID - package limited (A): 8 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17578Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、9.4mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 7.3 Rds(on) at VGS=4.5 V (max) (mΩ): 9.4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 7.9 QGD (typ) (nC): 1.7 QGS (typ) (nC): 3.3 ID - silicon limited at TC=25°C (A): 54 ID - package limited (A): 20 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 7.3
Rds(on) at VGS=4.5 V (max) (mΩ): 9.4 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 7.9 QGD (typ) (nC): 1.7 QGS (typ) (nC): 3.3 ID - silicon limited at TC=25°C (A): 54 ID - package limited (A): 20 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17579Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、14.2mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 10.2 Rds(on) at VGS=4.5 V (max) (mΩ): 14.2 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 5.3 QGD (typ) (nC): 1.2 QGS (typ) (nC): 2.2 ID - silicon limited at TC=25°C (A): 39 ID - package limited (A): 20 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 10.2
Rds(on) at VGS=4.5 V (max) (mΩ): 14.2 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 5.3 QGD (typ) (nC): 1.2 QGS (typ) (nC): 2.2 ID - silicon limited at TC=25°C (A): 39 ID - package limited (A): 20 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD23202W10


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1mm x 1mm WLP 封装、具有栅极 ESD 保护的单路、53mΩ、-12V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 53 Rds(on) at VGS=2.5 V (max) (mΩ): 66 VGSTH typ (typ) (V): -0.6 QG (typ) (nC): 2.9 QGD (typ) (nC): 0.28 QGS (typ) (nC): 0.55 ID - silicon limited at TC=25°C (A): 2.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -12 VGS (V): -6 Type: P-channel Configuration: Single Rds(on) at VGS=4.5 V (max) (mΩ): 53 Rds(on) at VGS=2.5 V (max) (mΩ): 66
VGSTH typ (typ) (V): -0.6 QG (typ) (nC): 2.9 QGD (typ) (nC): 0.28 QGS (typ) (nC): 0.55 ID - silicon limited at TC=25°C (A): 2.2 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD16570Q5B


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、0.82mΩ、25V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 25 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 0.59 Rds(on) at VGS=4.5 V (max) (mΩ): 0.82 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 95 QGD (typ) (nC): 31 QGS (typ) (nC): 29 ID - silicon limited at TC=25°C (A): 456 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 25 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 0.59
Rds(on) at VGS=4.5 V (max) (mΩ): 0.82 VGSTH typ (typ) (V): 1.5 QG (typ) (nC): 95 QGD (typ) (nC): 31 QGS (typ) (nC): 29 ID - silicon limited at TC=25°C (A): 456 ID - package limited (A): 100 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17577Q3A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 3mm x 3mm SON 封装的单路、6.4mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.8 Rds(on) at VGS=4.5 V (max) (mΩ): 6.4 VGSTH typ (typ) (V): 1.4 QG (typ) (nC): 13 QGD (typ) (nC): 2.8 QGS (typ) (nC): 5.1 ID - silicon limited at TC=25°C (A): 83 ID - package limited (A): 35 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.8
Rds(on) at VGS=4.5 V (max) (mΩ): 6.4 VGSTH typ (typ) (V): 1.4 QG (typ) (nC): 13 QGD (typ) (nC): 2.8 QGS (typ) (nC): 5.1 ID - silicon limited at TC=25°C (A): 83 ID - package limited (A): 35 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD17577Q5A


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 5mm x 6mm SON 封装的单路、5.8mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.2 Rds(on) at VGS=4.5 V (max) (mΩ): 5.8 VGSTH typ (typ) (V): 1.4 QG (typ) (nC): 13 QGD (typ) (nC): 2.8 QGS (typ) (nC): 5.1 ID - silicon limited at TC=25°C (A): 83 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): 30 VGS (V): 20 Type: N-channel Configuration: Single Rds(on) at VGS=10 V (max) (mΩ): 4.2
Rds(on) at VGS=4.5 V (max) (mΩ): 5.8 VGSTH typ (typ) (V): 1.4 QG (typ) (nC): 13 QGD (typ) (nC): 2.8 QGS (typ) (nC): 5.1 ID - silicon limited at TC=25°C (A): 83 ID - package limited (A): 60 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150

CSD75208W1015


数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: 采用 1mm x 1.5mm WLP 封装、具有栅极 ESD 保护的双通道共源极、108mΩ、-20V、P 沟道 NexFET™ 功率 MOSFET

VDS (V): -20 VGS (V): -6 Type: P-channel Configuration: Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ): 108 Rds(on) at VGS=2.5 V (max) (mΩ): 150 VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 1.9 QGD (typ) (nC): 0.23 QGS (typ) (nC): 0.48 ID - silicon limited at TC=25°C (A): 1.6 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150 VDS (V): -20 VGS (V): -6 Type: P-channel Configuration: Dual Common Source Rds(on) at VGS=4.5 V (max) (mΩ): 108 Rds(on) at VGS=2.5 V (max) (mΩ): 150
VGSTH typ (typ) (V): -0.8 QG (typ) (nC): 1.9 QGD (typ) (nC): 0.23 QGS (typ) (nC): 0.48 ID - silicon limited at TC=25°C (A): 1.6 Logic level: Yes Rating: Catalog Operating temperature range (°C): -55 to 150